High-speed operation of a resonant tunneling flip-flop circuit employing a MOBILE (monostable-bistable transition logic element)

Annual Device Research Conference Digest

Volumn , Issue , 1997, Pages 94-95

  Maezawa, Koichi ^a   Matsuzaki, Hideaki ^a   Arai, Kunihiro ^a   Otsuji, Taiichi ^a   Yamamoto, Masafumi ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; HIGH ELECTRON MOBILITY TRANSISTORS; NEGATIVE RESISTANCE; SEMICONDUCTING INDIUM PHOSPHIDE; TUNNEL DIODES;

MONOSTABLE BISTABLE TRANSITION LOGIC ELEMENT (MOBILE); NEGATIVE DIFFERENTIAL RESISTANCE (NDR) DEVICES; PEAK CURRENT MODULATION; RESONANT TUNNELING DIODES (RTD);

FLIP FLOP CIRCUITS;

EID: 0030658228     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)