-
1
-
-
0014707790
-
Superlattics and negative differential conductivity in semiconductors
-
Jan.
-
L. Esaki and R. Tsu, "Superlattics and negative differential conductivity in semiconductors," IBM J. Res. Develop., vol. 14, pp. 61-65, Jan. 1970;
-
(1970)
IBM J. Res. Develop.
, vol.14
, pp. 61-65
-
-
Esaki, L.1
Tsu, R.2
-
2
-
-
6244304433
-
Tunneling in a finite supcrlattice
-
June
-
R. Tsu and L. Esaki, "Tunneling in a finite supcrlattice," Appl. Phys. Lett., vol. 22, pp. 562-564, June1973;
-
(1973)
Appl. Phys. Lett.
, vol.22
, pp. 562-564
-
-
Tsu, R.1
Esaki, L.2
-
3
-
-
0016072199
-
Resonant tunneling in semiconductor double barriers
-
June
-
L. L. Chang, L. Esaki, and R. Tsu, "Resonant tunneling in semiconductor double barriers," Appl. Phys. Lett., vol. 24, pp. 593-595, June1974.
-
(1974)
Appl. Phys. Lett.
, vol.24
, pp. 593-595
-
-
Chang, L.L.1
Esaki, L.2
Tsu, R.3
-
4
-
-
0000900676
-
-
this issue
-
P. Mazumder, S. Kulkarni, M. Bhattacharya, J. P. Sun, and G. I. Haddad, "Digital circuit applications of resonant tunneling devices," this issue, pp. 664-686.
-
Digital Circuit Applications of Resonant Tunneling Devices
, pp. 664-686
-
-
Mazumder, P.1
Kulkarni, S.2
Bhattacharya, M.3
Sun, J.P.4
Haddad, G.I.5
-
5
-
-
0031073407
-
A 4-leveI storage 4Gb DRAM
-
San Francisco, CA, Feb.
-
T. Murotani, I. Naritake, T. Matano, T. Ohtsuki, N. Kasai, H. Koga, K. Koyama, K. Nakajima, H. Yamaguchi, H. Watanabe, and T. Okuda, "A 4-leveI storage 4Gb DRAM," in 7997 IEEE Int. Solid-State Circuits Conf. Dig., San Francisco, CA, Feb. 1997, p. 74;
-
(1997)
7997 IEEE Int. Solid-State Circuits Conf. Dig.
, pp. 74
-
-
Murotani, T.1
Naritake, I.2
Matano, T.3
Ohtsuki, T.4
Kasai, N.5
Koga, H.6
Koyama, K.7
Nakajima, K.8
Yamaguchi, H.9
Watanabe, H.10
Okuda, T.11
-
6
-
-
0031069797
-
Multimedia impact on devices in the 21st century
-
San Francisco, CA, Feb.
-
and H. Yasuda, "Multimedia impact on devices in the 21st century," in 7997 IEEE Int. Solid-State Circuits Conf. Dig., San Francisco, CA, Feb.1997, p. 28.
-
(1997)
7997 IEEE Int. Solid-State Circuits Conf. Dig.
, pp. 28
-
-
Yasuda, H.1
-
7
-
-
0000113067
-
Single electronics: A correlated transfer of single electron and Cooper pairs in systems of small tunnel junctions
-
B. L. Altshuler, P. A. Lee, and R. A. Webb, Eds. New York: North-Holland, ch. 6
-
D. V. Averin and K. K. Likharcv, "Single electronics: A correlated transfer of single electron and Cooper pairs in systems of small tunnel junctions," in Mesoscopic Phenomena in Solids. B. L. Altshuler, P. A. Lee, and R. A. Webb, Eds. New York: North-Holland, 1991, ch. 6, pp. 173-271.
-
(1991)
Mesoscopic Phenomena in Solids.
, pp. 173-271
-
-
Averin, D.V.1
Likharcv, K.K.2
-
8
-
-
0031122029
-
Overview of nanoelectronic devices
-
Apr.
-
D. Goldhabcr-Gordon, M. S. Montcmcrlo, J. C. Love, G. J. Optitcck, and J. Ellenbogen, "Overview of nanoelectronic devices," Proc. IEEE, vol. 85, pp. 521-540, Apr. 1997.
-
(1997)
Proc. IEEE
, vol.85
, pp. 521-540
-
-
Goldhabcr-Gordon, D.1
Montcmcrlo, M.S.2
Love, J.C.3
Optitcck, G.J.4
Ellenbogen, J.5
-
9
-
-
0026205602
-
Limits of nano-gate fabrication
-
Aus.
-
D. A. Allee, A. N. Broers, and R. F. W. Pease, "Limits of nano-gate fabrication," Proc. IEEE, vol. 79, pp. 1093-1105, Aus. 1991;
-
(1991)
Proc. IEEE
, vol.79
, pp. 1093-1105
-
-
Allee, D.A.1
Broers, A.N.2
Pease, R.F.W.3
-
10
-
-
0026203062
-
Nanostructure fabrication
-
Aug.
-
and H. Ahmed, ''Nanostructure fabrication," Proc. IEEE, vol. 79, pp. 1140-1148, Aug.1991.
-
(1991)
Proc. IEEE
, vol.79
, pp. 1140-1148
-
-
Ahmed, H.1
-
11
-
-
0030211846
-
Compact multiple-valued multiplexers using negative differential resistance devices
-
Aug.
-
H. Chan, S. Mohan, P. Mazumder, and G. I. Haddad, "Compact multiple-valued multiplexers using negative differential resistance devices," IEEE J. Solid-State Circuits, vol. 31, pp. 1151-1156, Aug. 1996.
-
(1996)
IEEE J. Solid-State Circuits
, vol.31
, pp. 1151-1156
-
-
Chan, H.1
Mohan, S.2
Mazumder, P.3
Haddad, G.I.4
-
12
-
-
0030409583
-
RTD/HFET low standby power SRAM gain cell, in
-
New York: IEEE Press
-
J. van der Wagt, A. Seabaugh, and E. A. Beam III, "RTD/HFET low standby power SRAM gain cell," in IEDM 1996 Technical Digest. New York: IEEE Press, 1996, pp. 425-428.
-
(1996)
IEDM 1996 Technical Digest.
, pp. 425-428
-
-
Van Der Wagt, J.1
Seabaugh, A.2
Beam III, E.A.3
-
13
-
-
0031077905
-
12 GHz clocked operation of ultra-low power intcrband resonant tunneling diode pipelined loeic gates
-
Feb.
-
W. Williamson III, S. B. Enquist, D. H. Chow, H. L. Dunlap, S. Subramaniam, P. M. Lei, G. H. Bernstein, and B. K. Gilbert, "12 GHz clocked operation of ultra-low power intcrband resonant tunneling diode pipelined loeic gates," IEEE J. Solid-State Circuits, vol. 32, pp. 222-231, Feb. 1997.
-
(1997)
IEEE J. Solid-State Circuits
, vol.32
, pp. 222-231
-
-
Williamson III, W.1
Enquist, S.B.2
Chow, D.H.3
Dunlap, H.L.4
Subramaniam, S.5
Lei, P.M.6
Bernstein, G.H.7
Gilbert, B.K.8
-
14
-
-
0030150179
-
Novel multiplevalued logic gate using resonant tunneling devices
-
May
-
T. Waho, K. J. Chen, and M. Yamamoto, "Novel multiplevalued logic gate using resonant tunneling devices," IEEE Electron Device Lett., vol. 17, pp. 223-225, May 1996.
-
(1996)
IEEE Electron Device Lett.
, vol.17
, pp. 223-225
-
-
Waho, T.1
Chen, K.J.2
Yamamoto, M.3
-
15
-
-
0000939849
-
Frequency limit of double barrier resonant tunneling oscillators
-
S. Luryi, "Frequency limit of double barrier resonant tunneling oscillators," Appl. Phys. Lett., vol. 47, pp. 490-492, Sept. 1985.
-
(1985)
Appl. Phys. Lett.
, vol.47
, pp. 490-492
-
-
Luryi, S.1
-
16
-
-
5344232385
-
Boundary conditions for open quantum systems driven far from equilibrium
-
July
-
W. R. Frensley, "Boundary conditions for open quantum systems driven far from equilibrium," Rev. Mod. Phvs., vol. 62, pp. 745-791, July 1990.
-
(1990)
Rev. Mod. Phvs.
, vol.62
, pp. 745-791
-
-
Frensley, W.R.1
-
17
-
-
77956698230
-
Modeling of quantum transport in semiconductor devices, in
-
H. Ehrenreich and F. Spaepen Eds. New York: Academic
-
D. K. Ferry and H. L. Grubin, "Modeling of quantum transport in semiconductor devices," in Solid Slate Physics, Advances in Research and Applications, vol. 49, H. Ehrenreich and F. Spaepen Eds. New York: Academic, 1995, pp. 283-448.
-
(1995)
Solid Slate Physics, Advances in Research and Applications
, vol.49
, pp. 283-448
-
-
Ferry, D.K.1
Grubin, H.L.2
-
18
-
-
0001885334
-
Band structure, impurities and excitons in superlattices, in
-
M. Altarelli, "Band structure, impurities and excitons in superlattices," in Heterostriictnres and Semiconductor Superlattices, G. Allan and G. Bastard, Eds. Berlin: Springer-Verlag, 1996, pp. 12-37;
-
(1996)
Heterostriictnres and Semiconductor Superlattices, G. Allan and G. Bastard, Eds. Berlin: Springer-Verlag
, pp. 12-37
-
-
Altarelli, M.1
-
19
-
-
77956903477
-
Electron states in semiconductor heterostructures, in
-
H. Ehrenreich and D. Turnbull, Eds. New York: Academic
-
and G. Bastard, J. A. Brum, and R. Ferreira, "Electron states in semiconductor heterostructures," in Solid State Physics, Advances in Research and Applications, vol. 44, H. Ehrenreich and D. Turnbull, Eds. New York: Academic, 1991, pp. 229-415.
-
(1991)
Solid State Physics, Advances in Research and Applications
, vol.44
, pp. 229-415
-
-
Bastard, G.1
Brum, J.A.2
Ferreira, R.3
-
20
-
-
84996237073
-
Electrical resistance of disordered onedimensional lattices
-
R. Landauer, "Electrical resistance of disordered onedimensional lattices," Philosophv Mag., vol. 21, pp. 863-867, 1970.
-
(1970)
Philosophv Mag.
, vol.21
, pp. 863-867
-
-
Landauer, R.1
-
21
-
-
8744270531
-
Generalized many-channel conductance formula with applications to small rings
-
May
-
M. Biittiker, Y. Imry, R. Landauer, and S. Pinhas, "Generalized many-channel conductance formula with applications to small rings," Phys. Rev. B., vol. 31, pp. 6207-6215, May 1985.
-
(1985)
Phys. Rev. B.
, vol.31
, pp. 6207-6215
-
-
Biittiker, M.1
Imry, Y.2
Landauer, R.3
Pinhas, S.4
-
22
-
-
6244304433
-
Tunneling in a finite superlatticc
-
June
-
R. Tsu and L. Esaki, "Tunneling in a finite superlatticc," Appl. Phys. Lett., vol. 22, pp. 562-564, June 1973.
-
(1973)
Appl. Phys. Lett.
, vol.22
, pp. 562-564
-
-
Tsu, R.1
Esaki, L.2
-
23
-
-
0000948729
-
Self-consistent analysis of resonant tunnelina devices
-
Nov.
-
H. Ohnishi, T. Inata, S. Muto, N. Yokoyama, and A. Shibatomi, "Self-consistent analysis of resonant tunnelina devices," Appl. Ph\s. Lett., vol. 49, pp. 1248-1250, Nov. 1986.
-
(1986)
Appl. Ph\s. Lett.
, vol.49
, pp. 1248-1250
-
-
Ohnishi, H.1
Inata, T.2
Muto, S.3
Yokoyama, N.4
Shibatomi, A.5
-
24
-
-
0000977283
-
Importance of space charge effects in resonant tunneling devices
-
Mar.
-
M." Cahay, M. Mclennan, S. Datta, and M. S. Lundstrom, "Importance of space charge effects in resonant tunneling devices," Appl. Ph\s. Lett., vol. 50, pp. 612-614, Mar. 1987.
-
(1987)
Appl. Ph\s. Lett.
, vol.50
, pp. 612-614
-
-
Cahay, M.1
Mclennan, M.2
Datta, S.3
Lundstrom, M.S.4
-
25
-
-
0001502452
-
C-V and I-V characteristics quantum well varactors
-
Sept.
-
J. P. Sun, R. K. Mains, W. L Chen, J. R. East, and G. I. Haddad, "C-V and I-V characteristics quantum well varactors," J. Appl. Phys., vol. 72, pp. 2340-2346, Sept. 1992.
-
(1992)
J. Appl. Phys.
, vol.72
, pp. 2340-2346
-
-
Sun, J.P.1
Mains, R.K.2
Chen, W.L.3
East, J.R.4
Haddad, G.I.5
-
26
-
-
33646924406
-
Self-consistent model for twodimensional accumulation layer states in resonant tunneling devices
-
ct.
-
T. Füg and A. P. Jauho, "Self-consistent model for twodimensional accumulation layer states in resonant tunneling devices," Appl. Phys. Lett., vol. 59, pp. 2245-2247,ct. 1991.
-
(1991)
Appl. Phys. Lett.
, vol.59
, pp. 2245-2247
-
-
Füg, T.1
Jauho, A.P.2
-
27
-
-
77957047253
-
The k p method, in
-
R. K. Willardson and A. C. Beer, Eds. New York: Academic
-
E. O. Kane, "The k p method," in Semiconductors and Semimelals, vol. 1, R. K. Willardson and A. C. Beer, Eds. New York: Academic, 1966, pp. 75-100.
-
(1966)
Semiconductors and Semimelals
, vol.1
, pp. 75-100
-
-
Kane, E.O.1
-
28
-
-
0342831480
-
Ga-Al, As-Ga,_Al,As-GaAs doublebarrier structures
-
Dec.
-
J. N. Schulman, "Ga-Al, As-Ga,_Al,As-GaAs doublebarrier structures," J. Appl. Phvs., vol. 60, pp. 3954-3958, Dec. 1986.
-
(1986)
J. Appl. Phvs.
, vol.60
, pp. 3954-3958
-
-
Schulman, J.N.1
-
29
-
-
0000696537
-
T and A" state influence on resonant tunneling current in single and double barrier GaAs/AlAs structures
-
Apr.
-
K. V. Rousseau, K. L. Wang, and J. N. Schulman, 'T and A" state influence on resonant tunneling current in single and double barrier GaAs/AlAs structures," Appl. Ph\s. Lett., vol. 54, pp. 1341-1343, Apr. 1989.
-
(1989)
Appl. Ph\s. Lett.
, vol.54
, pp. 1341-1343
-
-
Rousseau, K.V.1
Wang, K.L.2
Schulman, J.N.3
-
30
-
-
0020545505
-
A semi-empirical tight-binding theory of the electronic structure of semiconductors
-
May
-
P. Vogl, H. P. Hjalmarson, and J. D. Dow, "A semi-empirical tight-binding theory of the electronic structure of semiconductors," J. Ph\s. Client. Solids, vol. 44, pp. 365-378, May 1983.
-
(1983)
J. Ph\s. Client. Solids
, vol.44
, pp. 365-378
-
-
Vogl, P.1
Hjalmarson, H.P.2
Dow, J.D.3
-
31
-
-
0001553106
-
Incorporation of incompleteness in the k-p perturbation theory
-
Dec.
-
T. B. Boykin, "Incorporation of incompleteness in the k-p perturbation theory," Pirn. Rev. B, vol. 52, pp. 16317-16320, Dec. 1995.
-
(1995)
Pirn. Rev. B
, vol.52
, pp. 16317-16320
-
-
Boykin, T.B.1
-
32
-
-
3743054730
-
Quantitative simulation of a resonant tunneling diode
-
Apr.
-
R. C. Bowen, G. Klimcck, R. K. Lake, W. R. Frensley, and T. Moise, "Quantitative simulation of a resonant tunneling diode," J. Appl. Phys., vol. 81, pp. 3207-3213, Apr. 1997.
-
(1997)
J. Appl. Phys.
, vol.81
, pp. 3207-3213
-
-
Bowen, R.C.1
Klimcck, G.2
Lake, R.K.3
Frensley, W.R.4
Moise, T.5
-
33
-
-
0000013914
-
Calculation of phononassisted tunneling and valley current in a double-barrier diode
-
Oct.
-
F. Chcvoir and B. Vinter, "Calculation of phononassisted tunneling and valley current in a double-barrier diode," Appl. Phvs. Lett., vol. 55, pp. 1859-1861, Oct. 1989.
-
(1989)
Appl. Phvs. Lett.
, vol.55
, pp. 1859-1861
-
-
Chcvoir, F.1
Vinter, B.2
-
34
-
-
36449008398
-
Theory of localized phonon modes and their effects ion electron tunneling in double barrier structures
-
Sept.
-
P. J. Turley and S. W. Tcitsworth, "Theory of localized phonon modes and their effects ion electron tunneling in double barrier structures," J. Appl. Pliys., vol. 72, pp. 2356-2366, Sept. 1992.
-
(1992)
J. Appl. Pliys.
, vol.72
, pp. 2356-2366
-
-
Turley, P.J.1
Tcitsworth, S.W.2
-
35
-
-
0001396329
-
Three-dimensional scatteringassisted tunneling in resonant-tunneling diodes
-
Jan.
-
P. Roblin and W. R. Liou, "Three-dimensional scatteringassisted tunneling in resonant-tunneling diodes," Phvs. Rev. B, vol. 47, pp. 2146-2161, Jan. 1993.
-
(1993)
Phvs. Rev. B
, vol.47
, pp. 2146-2161
-
-
Roblin, P.1
Liou, W.R.2
-
36
-
-
4243083707
-
Model of phonon associated electron tunneling through a semiconductor double barrier
-
July
-
W. Cai, T. F. Zheng, P. Hu, B. Yudanin, and M. Lax, "Model of phonon associated electron tunneling through a semiconductor double barrier," Pli\s. Rev. Lett., vol. 63, pp. 418-421, July 1989.
-
(1989)
Pli\s. Rev. Lett.
, vol.63
, pp. 418-421
-
-
Cai, W.1
Zheng, T.F.2
Hu, P.3
Yudanin, B.4
Lax, M.5
-
37
-
-
33646904088
-
Evanescent channels in calculation of phononassisted tunneling spectrum of a semiconductor tunneling structure
-
Feb.
-
Y. Fu, Q. Chen, and M. Willandcr, "Evanescent channels in calculation of phononassisted tunneling spectrum of a semiconductor tunneling structure," J. Appl. Ph\s., vol. 74, pp. 1848-1852, Feb. 1993.
-
(1993)
J. Appl. Ph\s.
, vol.74
, pp. 1848-1852
-
-
Fu, Y.1
Chen, Q.2
Willandcr, M.3
-
38
-
-
0000110312
-
Effect of inelastic processes on resonant tunneling in one dimension
-
Mar.
-
A. D. Stone and P. A. Lee, "Effect of inelastic processes on resonant tunneling in one dimension," Pins. Rev. Lett., vol. 54, pp. 1196-1199, Mar. 1985.
-
(1985)
Pins. Rev. Lett.
, vol.54
, pp. 1196-1199
-
-
Stone, A.D.1
Lee, P.A.2
-
39
-
-
0027904253
-
Improved optical model for resonant tunneling diode
-
Dec.
-
Y. Zohta and T. Tanamoto, "Improved optical model for resonant tunneling diode," J. Appl. Phvs., vol. 74, pp. 6996-6998, Dec. 1994.
-
(1994)
J. Appl. Phvs.
, vol.74
, pp. 6996-6998
-
-
Zohta, Y.1
Tanamoto, T.2
-
41
-
-
33646903393
-
Self-consistent scattering calculation of resonant tunneling diode characteristics
-
Tempe, AZ, Oct.
-
J. P. Sun and G. I. Haddad, "Self-consistent scattering calculation of resonant tunneling diode characteristics," presented at the 1995 International Workshop for Computational Electronics, Tempe, AZ, Oct. 1995.
-
(1995)
1995 International Workshop for Computational Electronics
-
-
Sun, J.P.1
Haddad, G.I.2
-
42
-
-
33751221548
-
Wigner function model of a resonant tunnelina device
-
July
-
W. R. Frensley, "Wigner function model of a resonant tunnelina device," Pliys. Rev. B, vol. 36, pp. 1570-1580, July 1987.
-
(1987)
Pliys. Rev. B
, vol.36
, pp. 1570-1580
-
-
Frensley, W.R.1
-
43
-
-
0001610982
-
Wigner function modeling of resonant tunneling diodes with high peak-to-valley ratios
-
Nov.
-
R. K. Mains and G. I. Haddad, "Wigner function modeling of resonant tunneling diodes with high peak-to-valley ratios," J. Appl. Phys., vol. 64, pp. 5041-5044, Nov. 1988.
-
(1988)
J. Appl. Phys.
, vol.64
, pp. 5041-5044
-
-
Mains, R.K.1
Haddad, G.I.2
-
44
-
-
0000408017
-
The effects of scattering on current-voltage characteristics, transient response, and particle trajectories in the numerical simulation of resonant tunneling diodes
-
June
-
K. L. Jenscn and F. A. Buot, "The effects of scattering on current-voltage characteristics, transient response, and particle trajectories in the numerical simulation of resonant tunneling diodes," J. Appl. Phvs., vol. 67, pp. 7602-7607, June 1990.
-
(1990)
J. Appl. Phvs.
, vol.67
, pp. 7602-7607
-
-
Jenscn, K.L.1
Buot, F.A.2
-
45
-
-
0023983782
-
Quantum tunneling properties from a Wigner function study
-
Mar./Apr.
-
N. C. Kluksdahl, A. M. Kriman, C. Ringhofer, and D. K. Ferry, "Quantum tunneling properties from a Wigner function study," Solid-State Electron., vol. 31, pp. 743-746. Mar./Apr. 1988.
-
(1988)
Solid-State Electron.
, vol.31
, pp. 743-746
-
-
Kluksdahl, N.C.1
Kriman, A.M.2
Ringhofer, C.3
Ferry, D.K.4
-
46
-
-
0040540177
-
An accurate re-formulation of the Wigner function method for quantum transport modeling
-
May
-
R. K. Mains and G. I. Haddad, "An accurate re-formulation of the Wigner function method for quantum transport modeling," J. Comput. Phys., vol. 112, pp. 149-161, May 1994.
-
(1994)
J. Comput. Phys.
, vol.112
, pp. 149-161
-
-
Mains, R.K.1
Haddad, G.I.2
-
47
-
-
0002370165
-
Density matrix simulations of semiconductor devices, in
-
D. K. Ferry, H. L. Grubin, C. Jacoboni, and A. Jauho, Eds., NATO AS! Series B: Physics. New York: Plenum
-
H. L. Grubin, "Density matrix simulations of semiconductor devices," in Quantum Transport in Ultra-Small Devices, D. K. Ferry, H. L. Grubin, C. Jacoboni, and A. Jauho, Eds., NATO AS! Series B: Physics. New York: Plenum, 1995, vol. 342, p. 241.
-
(1995)
Quantum Transport in Ultra-Small Devices
, vol.342
, pp. 241
-
-
Grubin, H.L.1
-
48
-
-
13244275227
-
Mesoscopic physics and nanoelectronics: Nanoscience and nanotcchnology
-
Nov.
-
F. A. Buot, "Mesoscopic physics and nanoelectronics: Nanoscience and nanotcchnology," Ph\s. Rep., vol. 234, pp. 73-174, Nov. 1993.
-
(1993)
Ph\s. Rep.
, vol.234
, pp. 73-174
-
-
Buot, F.A.1
-
49
-
-
36149031302
-
The role of inelastic scattering in resonant tunnelina hetcrostructures
-
Nov.
-
E. V. Anda and F. Flores, "The role of inelastic scattering in resonant tunnelina hetcrostructures," J. Ph\s. Condens. Matter, vol. 3, pp. 9087-9101, Nov. 1991.
-
(1991)
J. Ph\s. Condens. Matter
, vol.3
, pp. 9087-9101
-
-
Anda, E.V.1
Flores, F.2
-
50
-
-
4244177773
-
Nonequilibrium Green's function method applied to double barrier resonant tunneling diodes
-
Mar.
-
R. Lake and S. Datta, "Nonequilibrium Green's function method applied to double barrier resonant tunneling diodes," Phys. Rev. B, vol. 45, pp. 6670-6685, Mar. 1992.
-
(1992)
Phys. Rev. B
, vol.45
, pp. 6670-6685
-
-
Lake, R.1
Datta, S.2
-
51
-
-
0029534156
-
NanoElectronic Modeling (NEMO)
-
New York: IEEE Press
-
G. Klimeck, R. Lake, R. C. Bowen, W. R. Frensley, and D. Blanks, "NanoElectronic Modeling (NEMO)," in 53rd Annual Device Research Conference Digest. New York: IEEE Press, 1995. pp. 52-53;
-
(1995)
53rd Annual Device Research Conference Digest
, pp. 52-53
-
-
Klimeck, G.1
Lake, R.2
Bowen, R.C.3
Frensley, W.R.4
Blanks, D.5
-
52
-
-
0029714324
-
Experimentally verified quantum device simulations based on multiband models, Hartree selfconsistency, and scattering assisted charging
-
R. Lake, G. Klimeck, R. C. Bowcn, C. Fernando, D. Jovanovic, D. Blanks, T. S. Moise, M. Leng, and W. R. Frensley, "Experimentally verified quantum device simulations based on multiband models, Hartree selfconsistency, and scattering assisted charging," in 54th Annual Device Research Conference Digest. New York: IEEE Press, 1996. pp. 174-175.
-
(1996)
54th Annual Device Research Conference Digest. New York: IEEE Press
, pp. 174-175
-
-
Lake, R.1
Klimeck, G.2
Bowcn, R.C.3
Fernando, C.4
Jovanovic, D.5
Blanks, D.6
Moise, T.S.7
Leng, M.8
Frensley, W.R.9
-
53
-
-
0003412921
-
-
Springer Scries in Solid-State Science, Berlin: Springer-Verlag
-
E. N. Economou, Green's Functions in Quantum Pliysics, Springer Scries in Solid-State Science, vol. 7. Berlin: Springer-Verlag, 1983.
-
(1983)
Green's Functions in Quantum Pliysics
, vol.7
-
-
Economou, E.N.1
-
54
-
-
0000452993
-
Diagram technique for nonequilibrium processes
-
Apr.
-
L. V. Keldysh, "Diagram technique for nonequilibrium processes," Sov. Phys. JETP. vol. 20, pp. 1018-1026, Apr. 1965.
-
(1965)
Sov. Phys. JETP.
, vol.20
, pp. 1018-1026
-
-
Keldysh, L.V.1
-
57
-
-
21844436489
-
Quantum transport equation for electric and magnetic fields
-
Jan.
-
G. D. Mahan, "Quantum transport equation for electric and magnetic fields," Phys. Rep., vol. 145, pp. 251-318, Jan. 1987.
-
(1987)
Phys. Rep.
, vol.145
, pp. 251-318
-
-
Mahan, G.D.1
-
58
-
-
0001199748
-
Steady state quantum kinetic equation
-
Sept.
-
S. Datta, "Steady state quantum kinetic equation," Phvs. Rev. B, vol. 40, pp. 5830-5833, Sept. 1989.
-
(1989)
Phvs. Rev. B
, vol.40
, pp. 5830-5833
-
-
Datta, S.1
-
59
-
-
0000856635
-
Time-dependent transport through a mesoscopic structure
-
Sept.
-
N. S. Wingreen, A. Jauho, and Y. Meir, 'Time-dependent transport through a mesoscopic structure," Ph\s. Rev. B, vol. 48, pp. 8487-8490, Sept. 1993.
-
(1993)
Ph\s. Rev. B
, vol.48
, pp. 8487-8490
-
-
Wingreen, N.S.1
Jauho, A.2
Meir, Y.3
-
60
-
-
0346849576
-
Time-dependent transport in interacting and noninteracting resonant-tunneling systems
-
Aug.
-
A. Jauho, N. S. Wingreen, and Y. Meir, 'Time-dependent transport in interacting and noninteracting resonant-tunneling systems," Phys. Rev. B. vol. 50, pp. 5528-5544, Aug. 1994.
-
(1994)
Phys. Rev. B.
, vol.50
, pp. 5528-5544
-
-
Jauho, A.1
Wingreen, N.S.2
Meir, Y.3
-
61
-
-
2842549616
-
The quantum transmitting boundary method
-
May
-
C. S. Lent and D. J. Kirkner, "The quantum transmitting boundary method," J. Appl. Phys., vol. 67, pp. 6353-6359, May 1990.
-
(1990)
J. Appl. Phys.
, vol.67
, pp. 6353-6359
-
-
Lent, C.S.1
Kirkner, D.J.2
-
62
-
-
0000801330
-
A self-consistent model of T-X mixing in GaAs/AlAs/GaAs quantum well structures using the quantum transmitting boundary method
-
Oct.
-
J. P. Sun, R. K. Mains, K. Yang, and G. I. Haddad, "A self-consistent model of T-X mixing in GaAs/AlAs/GaAs quantum well structures using the quantum transmitting boundary method," J. Appl. Pliys., vol. 74, pp. 5053-5060, Oct. 1993.
-
(1993)
J. Appl. Pliys.
, vol.74
, pp. 5053-5060
-
-
Sun, J.P.1
Mains, R.K.2
Yang, K.3
Haddad, G.I.4
-
63
-
-
0002762320
-
Frequency limit of double barrier resonant tunneling oscillators
-
July
-
D. D. Coon and H. C. Liu, "Frequency limit of double barrier resonant tunneling oscillators," Appl. Pli\s. Lett., vol. 49, pp. 94-96, July 1986.
-
(1986)
Appl. Pli\s. Lett.
, vol.49
, pp. 94-96
-
-
Coon, D.D.1
Liu, H.C.2
-
64
-
-
0027578157
-
Analysis of heterojunction bipolar transistor/resonant tunneling diode logic for low-power and high-speed digital applications
-
Apr.
-
C. E. Chang, P. M. Asbeck, K. C. Wang, and E. R. Brown, "Analysis of heterojunction bipolar transistor/resonant tunneling diode logic for low-power and high-speed digital applications," IEEE Trans. Electron Devices, vol. 40, pp. 685-691, Apr. 1993.
-
(1993)
IEEE Trans. Electron Devices
, vol.40
, pp. 685-691
-
-
Chang, C.E.1
Asbeck, P.M.2
Wang, K.C.3
Brown, E.R.4
-
65
-
-
0000583143
-
Device and circuit simulation of quantum electronic devices
-
June
-
S. Mohan, J. P. Sun, P. Mazumder, and G. I. Haddad, "Device and circuit simulation of quantum electronic devices," IEEE Trails. Computer-Aided Design, vol. 14, pp. 653-662, June 1995.
-
(1995)
IEEE Trails. Computer-Aided Design
, vol.14
, pp. 653-662
-
-
Mohan, S.1
Sun, J.P.2
Mazumder, P.3
Haddad, G.I.4
-
66
-
-
0030151465
-
Physicsbased RTD current-voltage equation
-
May
-
J. N. Schulman, H. J. De Los Santos, and D. H. Chow. "Physicsbased RTD current-voltage equation," IEEE Electron Device Lett., vol. 17, pp. 220-222, May 1996.
-
(1996)
IEEE Electron Device Lett.
, vol.17
, pp. 220-222
-
-
Schulman, J.N.1
De Los Santos, H.J.2
Chow, D.H.3
-
67
-
-
0027649407
-
A microwave measurement technique for characterizing the I-V relationship for negative differential conductance devices
-
Aug.
-
P. Huang, D. S. Pan, and N. C. Luhmann, Jr. "A microwave measurement technique for characterizing the I-V relationship for negative differential conductance devices," IEEE Trans. Microwave Theory Tech., vol. 41, pp. 1455-1458, Aug. 1993.
-
(1993)
IEEE Trans. Microwave Theory Tech.
, vol.41
, pp. 1455-1458
-
-
Huang, P.1
Pan, D.S.2
Luhmann, N.C.3
Jr4
-
68
-
-
77956949383
-
High-frequency resonant tunneling diodes, in
-
R. A. Kiehl and T. C. L. G. Sollner, Eds. New York: Academic
-
H. C. Liu and T. C. L. G. Sollner, "High-frequency resonant tunneling diodes," in Semiconductors and Seiniiiietals, vol. 41, High-Speed Heterostructure Devices, R. A. Kiehl and T. C. L. G. Sollner, Eds. New York: Academic, 1994, pp. 359-419.
-
(1994)
Semiconductors and Seiniiiietals, Vol. 41, High-Speed Heterostructure Devices
, vol.41
, pp. 359-419
-
-
Liu, H.C.1
Sollner, T.C.L.G.2
-
69
-
-
34848900870
-
Oscillation up to 712 GHz in InAs/AlSb resonant tunneling diodes
-
May
-
E. R. Brown, J. R. Soderstrom, C. D. Parker, L. J. Mahbney, K. M. Molvar, and T. C. McGill, "Oscillation up to 712 GHz in InAs/AlSb resonant tunneling diodes," Appl. Phys. Lett., vol. 58. pp. 2291-2293, May 1991.
-
(1991)
Appl. Phys. Lett.
, vol.58
, pp. 2291-2293
-
-
Brown, E.R.1
Soderstrom, J.R.2
Parker, C.D.3
Mahbney, L.J.4
Molvar, K.M.5
McGill, T.C.6
-
70
-
-
0027549821
-
91 GHz SiGe HBT's grown by MBE
-
Feb.
-
A. Gruhle, H. Kibbel, U. Erben, and E. Kasper, "91 GHz SiGe HBT's grown by MBE," Electron. Lett., vol. 29, pp. 415-417, Feb. 1993.
-
(1993)
Electron. Lett.
, vol.29
, pp. 415-417
-
-
Gruhle, A.1
Kibbel, H.2
Erben, U.3
Kasper, E.4
-
71
-
-
36449002873
-
Electron resonant tunneling in SiGe double barrier diodes
-
Aug.
-
K. Ismail, B. S. Meyerson, and P. J. Wang, "Electron resonant tunneling in SiGe double barrier diodes," Appl. Pliys. Lett., vol. 59. pp. 973-975, Aug. 1991.
-
(1991)
Appl. Pliys. Lett.
, vol.59
, pp. 973-975
-
-
Ismail, K.1
Meyerson, B.S.2
Wang, P.J.3
-
72
-
-
33646913968
-
Si/SiGe resonant tunneling devices separated by surrounding polysilicon
-
U. Konig, M. Kuisl, J. F. Luy, and F. Schaffler, "Si/SiGe resonant tunneling devices separated by surrounding polysilicon," Electron. Lett., vol. 26, pp.1904-1906, 1990.
-
(1990)
Electron. Lett.
, vol.26
, pp. 1904-1906
-
-
Konig, U.1
Kuisl, M.2
Luy, J.F.3
Schaffler, F.4
-
73
-
-
36549095453
-
Resonant tunneling in Si/Sii_j-Ger double barrier structures
-
May
-
H. C. Liu, D. Landheer, M. Buchanan, and D. C. Houghton, "Resonant tunneling in Si/Sii_j-Ger double barrier structures," Appl. Phys. Lett., vol. 52, pp. 1809-1811, May 1988.
-
(1988)
Appl. Phys. Lett.
, vol.52
, pp. 1809-1811
-
-
Liu, H.C.1
Landheer, D.2
Buchanan, M.3
Houghton, D.C.4
-
74
-
-
0005264329
-
Resonant tunneling of holes through silicon barriers
-
Man/Apr.
-
U. Gennser, V. P. Kesan, S. S. lyer, T. J. Bucelot, and E. S. Yang, "Resonant tunneling of holes through silicon barriers," J. Vac. Sei. Techno!., vol. 8, pp. 210-213, Man/Apr. 1990.
-
(1990)
J. Vac. Sei. Techno!.
, vol.8
, pp. 210-213
-
-
Gennser, U.1
Kesan, V.P.2
Lyer, S.S.3
Bucelot, T.J.4
Yang, E.S.5
-
75
-
-
33749094153
-
Silicon-based quantum wells
-
July
-
R. Tsu, "Silicon-based quantum wells," Nature, vol. 364, p.19, July 1993.
-
(1993)
Nature
, vol.364
, pp. 19
-
-
Tsu, R.1
-
76
-
-
0027887558
-
Silicon-based optoelectronics
-
Dec.
-
R. A. Soref, "Silicon-based optoelectronics," Proc. IEEE, vol. 81. pp. 1687-1706, Dec. 1993.
-
(1993)
Proc. IEEE
, vol.81
, pp. 1687-1706
-
-
Soref, R.A.1
-
78
-
-
0001306295
-
Pseudomorphic In.53Ga.47As/AlAs/InAs resonant tunneling diodes with peakto-valley ratios of 30 at room temperature
-
Oct.
-
T. Broekaert, W. Lee, and C. G. Fonstad, "Pseudomorphic In.53Ga.47As/AlAs/InAs resonant tunneling diodes with peakto-valley ratios of 30 at room temperature," Appl. Ph\s. Lett., vol. 53, pp. 1545-1547, Oct. 1988.
-
(1988)
Appl. Ph\s. Lett.
, vol.53
, pp. 1545-1547
-
-
Broekaert, T.1
Lee, W.2
Fonstad, C.G.3
-
79
-
-
0000362313
-
New negative differential resistance device based on resonant interband tunneling
-
Sept.
-
J. R. Soderstrom, D. H. Chow, and T. C. McGill, "New negative differential resistance device based on resonant interband tunneling," Appl. Phys. Lett., vol. 55, pp. 1094-1096, Sept. 1989.
-
(1989)
Appl. Phys. Lett.
, vol.55
, pp. 1094-1096
-
-
Soderstrom, J.R.1
Chow, D.H.2
McGill, T.C.3
-
80
-
-
36549103473
-
Interband tunneling in polytype GaSb/AlSb/InAs heterostructures
-
Nov.
-
L. F. Luo, B. Beresford, and W. I. Wang, "Interband tunneling in polytype GaSb/AlSb/InAs heterostructures," Appl. Phys. Lett., vol. 55, pp. 2023-2025, Nov. 1989.
-
(1989)
Appl. Phys. Lett.
, vol.55
, pp. 2023-2025
-
-
Luo, L.F.1
Beresford, B.2
Wang, W.I.3
-
81
-
-
0001481268
-
Resonant interband tunnel diodes
-
Feb.
-
M. Sweeny and J. M. Xu, "Resonant interband tunnel diodes," Appl. Phys. Lett., vol. 54, pp. 546-548, Feb. 1989.
-
(1989)
Appl. Phys. Lett.
, vol.54
, pp. 546-548
-
-
Sweeny, M.1
Xu, J.M.2
-
82
-
-
0013316924
-
Fabrication and de, microwave characteristics of submicron Schottky-coIIecto, I AlAs/In .-,:iGa i?As/InP resonant tunneling diodes
-
May
-
M. Reddy, M. J. Mondry, M. J. W. Rodwell, S. C. Martin, R. P. Smith, D. H. Chow, and J. N. Schulman, "Fabrication and de, microwave characteristics of submicron Schottky-coIIecto, I AlAs/In .-,:iGa i?As/InP resonant tunneling diodes," J. App\ I Pins., v'oi. 77, pp. 4819-4821, May1995. ' I
-
(1995)
J. App\ I Pins., V'oi.
, vol.77
, pp. 4819-4821
-
-
Reddy, M.1
Mondry, M.J.2
Rodwell, M.J.W.3
Martin, S.C.4
Smith, R.P.5
Chow, D.H.6
Schulman, J.N.7
-
83
-
-
0002086841
-
Ob. servation of resonant tunneling in AIGaAs/GaAs triple barriet diodes
-
July
-
T. Nakagawa, H. Inamoto, T. Kojoima, and K. Ohta, "Ob. servation of resonant tunneling in AIGaAs/GaAs triple barriet diodes," Appl. Phys. Lett., vol. 49, pp. 73-75, July 1986.
-
(1986)
Appl. Phys. Lett.
, vol.49
, pp. 73-75
-
-
Nakagawa, T.1
Inamoto, H.2
Kojoima, T.3
Ohta, K.4
-
84
-
-
0024104907
-
A new triple-well resonant tunneling diode with controllable double-negative resistance
-
Nov.
-
H. Mizuta, T. Tanoue, and S. Takahashi, "A new triple-well resonant tunneling diode with controllable double-negative resistance," IEEE Trans. Electron Devices, vol. ED-35, pn 1951-1956, Nov. 1988.
-
(1988)
IEEE Trans. Electron Devices
, vol.ED-35
, pp. 1951-1956
-
-
Mizuta, H.1
Tanoue, T.2
Takahashi, S.3
-
85
-
-
33744688122
-
Resonant tunneling in a quasionc-dimensional wire: Influence of evanescent modes
-
Apr.
-
A. Kumar and P. H. Bagwell, "Resonant tunneling in a quasionc-dimensional wire: Influence of evanescent modes" Ph\s. Rev. B, vol. 43, pp. 9012-9020, Apr. 1991.
-
(1991)
Ph\s. Rev. B
, vol.43
, pp. 9012-9020
-
-
Kumar, A.1
Bagwell, P.H.2
-
86
-
-
0001696967
-
Observation of discrete electronic states in zero-dimensional semiconductor nanostructure
-
Feb.
-
M. A. Reed, J. N. Randall, R. J. Aggarwal, R. J. Matyi, T. M. Moore, and A. E. Westel, "Observation of discrete electronic states in zero-dimensional semiconductor nanostructure," Phys Rev. Lett., vol. 60, pp. 535-537, Feb. 1988.
-
(1988)
Phys Rev. Lett.
, vol.60
, pp. 535-537
-
-
Reed, M.A.1
Randall, J.N.2
Aggarwal, R.J.3
Matyi, R.J.4
Moore, T.M.5
Westel, A.E.6
-
87
-
-
30244440809
-
Heterostructure p-n junction tunnel diodes
-
Sept.
-
D. Day, Y. Chung, C. Webb, J. N. Eckstein, J. M. Xu, and M. Sweeny, "Heterostructure p-n junction tunnel diodes," Appl Phvs. Lett., vol. 57, pp. 1140-1142, Sept. 1990.
-
(1990)
Appl Phvs. Lett.
, vol.57
, pp. 1140-1142
-
-
Day, D.1
Chung, Y.2
Webb, C.3
Eckstein, J.N.4
Xu, J.M.5
Sweeny, M.6
-
88
-
-
0031139734
-
Monolithic Schottky-collector resonant tunnel diode oscillator arrays to 650 GHz
-
May
-
M. Rcddy, S. C. Martin, A. C. Molnar, R. E. Muller, R. P Smith, P. H. Siegel, M. J. Mondry, M. J. W. Rodwell, and S. J. Alien, Jr., "Monolithic Schottky-collector resonant tunnel diode oscillator arrays to 650 GHz," IEEE Electron Device Lett., vol 18, pp. 218-221, May 1997.
-
(1997)
IEEE Electron Device Lett.
, vol.18
, pp. 218-221
-
-
Rcddy, M.1
Martin, S.C.2
Molnar, A.C.3
Muller, R.E.4
Smith, R.P.5
Siegel, P.H.6
Mondry, M.J.7
Rodwell, M.J.W.8
Alien Jr., S.J.9
-
89
-
-
0012470722
-
Variable-area resonant tunneling diodes using implanted inplane gates
-
July
-
C. J. Goodings, H. Mizuta, J. R. A. Cleaver, and H. Ahmed, "Variable-area resonant tunneling diodes using implanted inplane gates," J. Appl. Phys., vol. 76, pp. 1276-1286, July 1994.
-
(1994)
J. Appl. Phys.
, vol.76
, pp. 1276-1286
-
-
Goodings, C.J.1
Mizuta, H.2
Cleaver, J.R.A.3
Ahmed, H.4
-
90
-
-
0000194129
-
Single electron tunneling and Coulomb charging effects in asymmetric double-barrier resonant tunneling diodes
-
June
-
M. Tewordt, L. Martin-Moreno, T. J. Nicholls, M. Pepper, M J. Kelly, V. J. Law, D. A. Ritchie, J. E. F. Frost, and G. A. C. Jones, "Single electron tunneling and Coulomb charging effects in asymmetric double-barrier resonant tunneling diodes," Phys. Rev. B, vol. 45, pp. 14407-14410, June 1992.
-
(1992)
Phys. Rev. B
, vol.45
, pp. 14407-14410
-
-
Tewordt, M.1
Martin-Moreno, L.2
Nicholls, T.J.3
Pepper, M.4
Kelly, M.J.5
Law, V.J.6
Ritchie, D.A.7
Frost, J.E.F.8
Jones, G.A.C.9
-
91
-
-
0026819688
-
Single electron tunneling through a donor state in a gated resonant tunneling device
-
Feb.
-
M. VV. Dellow, C. J. G. M. Langerak, P. H. Beton, T. J. Foster, P. C. Main, L. Eaves, M. Henini, S. P. Beaumont, and C. D. W. Wilkinson, "Single electron tunneling through a donor state in a gated resonant tunneling device," Surface Sei., vol. 263, pp. 438-441, Feb. 1992. '
-
(1992)
Surface Sei.
, vol.263
, pp. 438-441
-
-
Dellow, M.V.V.1
Langerak, C.J.G.M.2
Beton, P.H.3
Foster, T.J.4
Main, P.C.5
Eaves, L.6
Henini, M.7
Beaumont, S.P.8
Wilkinson, C.D.W.9
-
92
-
-
33749415029
-
Single-electron tunneling in nanometer-scale double-barrier heterostructure devices
-
Sept.
-
B. Su, V. J. Goldman, and J. E. Cunningham, "Single-electron tunneling in nanometer-scale double-barrier heterostructure devices," Ph\s. Rev. B, vol. 46, pp. 7644-7655, Sept. 1992.
-
(1992)
Ph\s. Rev. B
, vol.46
, pp. 7644-7655
-
-
Su, B.1
Goldman, V.J.2
Cunningham, J.E.3
-
93
-
-
0025686617
-
The bound-state resonant tunneling transistor (BSRTT): Fabrication, d.c. I-V characteristics, and high-frequency properties
-
G. I. Haddad, U. K. Reddy, J. P. Sun, and R. K. Mains, "The bound-state resonant tunneling transistor (BSRTT): Fabrication, d.c. I-V characteristics, and high-frequency properties," Superlattices and Microstriictures, vol. 7, no. 4, pp. 369-374, 1990.
-
(1990)
Superlattices and Microstriictures
, vol.7
, Issue.4
, pp. 369-374
-
-
Haddad, G.I.1
Reddy, U.K.2
Sun, J.P.3
Mains, R.K.4
-
94
-
-
2342663844
-
Resonant-tunneling transistors using InGaAs-based materials
-
Mar.
-
N. Yokoyama, H. Ohnishi, T. Futatsugi, S. Muto, T. Mori, K. Imamura, and A. Shibatomi, "Resonant-tunneling transistors using InGaAs-based materials," Proc. SPIE, vol. 943, pp. 14-21, Mar. 1988.
-
(1988)
Proc. SPIE
, vol.943
, pp. 14-21
-
-
Yokoyama, N.1
Ohnishi, H.2
Futatsugi, T.3
Muto, S.4
Mori, T.5
Imamura, K.6
Shibatomi, A.7
|