Ultralow current density RTDs for tunneling-based SRAM

Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Volumn , Issue , 1997, Pages 601-604

  Van Der Wagt, J P A ^a   Seabaugh, A C ^a   Klimeck, G ^a   Beam, E A ^a   Boykin, T B ^b   Bowen, R C ^a   Lake, R ^a  

^a RAYTHEON COMPANY   (United States)

^b UNIVERSITY OF ALABAMA IN HUNTSVILLE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CELLS; CURRENT DENSITY; CYTOLOGY; GALLIUM COMPOUNDS; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; INTEGRATED CIRCUIT DESIGN; JUNCTION GATE FIELD EFFECT TRANSISTORS; RESONANT TUNNELING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; STATIC RANDOM ACCESS STORAGE;

CELL DESIGN; DESIGN RULES; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; LOW CURRENT DENSITY; PEAK TO VALLEY CURRENT RATIO; SRAM CELL; STANDBY POWER;

RESONANT TUNNELING DIODES;

EID: 0345630710     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCS.1998.711749     Document Type: Conference Paper

References (13)

1. Tomasetta L R 1995 Intl. Symp. Comp. Semicond. 29-32
2. Notomi S, et al 1987 Proc. GaAs IC Symp. 177-80
3. Suzuki M, et al 1991ISSCC Tech. Dig. 48-9
4. Goto H, et al 1992 IEEE J. Solid-St. Circ, 27 1490-1496
5. Abe M and Mimura T 1990 Proc. GaAs IC Symp. 127-30
6. Van der Wagt J P A, et al 1996IEDM Tech. Dig. 425-8
7. Itoh K, et al 1996 Symp. VLSI Tech. Dig. 2-7
8. Klimeck G, et al 1995 DRC Conf. Dig. 52-53
9. Lake R, et al 1997 J, Appl. Phys. 81 7845-69
10. Bowen R C, et al 1997 J. Appl. Phys. 81 3207-13
11. Boykin T B, et al 1997 Phys. Rev. B August 15 issue
12. Klimeck G, et al 1995 Appl. Phys. Lett. 67 2539-41
13. Van der Wagt J P A, et al 1996 DRC Conf. Dig. 168-9