A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter

IEEE Journal of Solid-State Circuits

Volumn 33, Issue 9, 1998, Pages 1342-1348

  Broekaert, Tom P E ^b,d,f,g,h   Brar, Berinder ^a,b,c,i   Van Der Wagt, J Paul A ^a,b,c,d,j,k   Seabaugh, Alan C ^a,b,d,l,m,n   Morris, Frank J ^a,b,d,o,p,q   Moise, Theodore S ^a,b,d,r,s,t   Beam III, Edward A ^a,b,e   Frazier, Gary A ^b  

^a IEEE   (United States)

^b RAYTHEON COMPANY   (United States)

^c ROCKWELL SCIENCE CENTER   (United States)

^d TEXAS INSTRUMENTS   (United States)

^e TRIQUINT SEMICONDUCTOR   (United States)

^f VRIJE UNIVERSITEIT BRUSSEL   (Belgium)

^g MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^h Vitesse Semiconductor ^*  (United States)

ⁱ UNIVERSITY OF CALIFORNIA   (United States)

^j UNIVERSITY OF TWENTE   (Netherlands)

^k STANFORD UNIVERSITY   (United States)

^l UNIVERSITY OF VIRGINIA   (United States)

^m NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

ⁿ AMERICAN PHYSICAL SOCIETY   (United States)

^o NORTH CAROLINA STATE UNIVERSITY   (United States)

^p Semiconductor Group

^q LUCENT TECHNOLOGIES   (United States)

^r TRINITY COLLEGE   (United States)

^s YALE UNIVERSITY   (United States)

^t Semiconductor Group   (United Kingdom)

more..

Author keywords

Analog digital conversion; FET's; Indium compounds; Quantization; Resonant tunneling diodes; Sample and hold circuits

Indexed keywords

EID: 0001047262     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.711333     Document Type: Article

References (15)

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