RTD/HFET Low Standby Power SRAM Gain Cell

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 425-428

  van der Wagt, Paul ^a   Seabaugh, Alan ^a   Beam, Ed ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CELLS; CYTOLOGY; DYNAMIC RANDOM ACCESS STORAGE; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; RESONANT TUNNELING; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR STORAGE; STATIC RANDOM ACCESS STORAGE; CURRENT DENSITY; ELECTRON TUNNELING; FIELD EFFECT TRANSISTORS; NEGATIVE RESISTANCE; RANDOM ACCESS STORAGE; STANDBY POWER SYSTEMS; TUNNEL DIODES;

GAIN CELL; INP SUBSTRATES; LOW CURRENT DENSITY; LOW STANDBY POWER; MULTI-VALUED; ORDERS OF MAGNITUDE; RESONANT-TUNNELING DIODES; SRAM CELL; STABLE STATE; STATIC MEMORY CELLS;

RESONANT TUNNELING DIODES; CELLULAR ARRAYS;

DYNAMIC RANDOM ACCESS MEMORY; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; NEGATIVE RESISTANCE DEVICES; RESONANT TUNNELING DIODES; STATIC RANDOM ACCESS MEMORY;

EID: 0030409583     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.553618     Document Type: Conference Paper

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