DHBT/RTD-based active frequency multiplier for wireless communications

Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Volumn , Issue , 1997, Pages 515-518

  De Los Santos, H J ^a   Chui, K ^a   Chow, D H ^b   Dunlap, H L ^b  

^a BOEING COMPANY   (United States)

^b Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM ARSENIDE; III-V SEMICONDUCTORS; RESONANT TUNNELING; RESONANT TUNNELING DIODES; WIRELESS TELECOMMUNICATION SYSTEMS;

ACTIVE DEVICES; ACTIVE FREQUENCIES; CONVERSION GAIN; DOUBLE HETEROSTRUCTURE BIPOLAR TRANSISTOR; HARMONIC CONTENTS; MICROWAVE PERFORMANCE; OUTPUT POWER; WIRELESS COMMUNICATIONS;

FREQUENCY MULTIPLYING CIRCUITS;

EID: 0344865560     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCS.1998.711729     Document Type: Conference Paper

References (4)

1. Heilmeyer G H 1992 IEEE Int. Solid-State Cir. Conf. Dig. 24-26
2. Capasso F 1990 Physics of Quantum Electron Devices (Springer-Verlag: Berlin
3. De Los Santos H J, Nardi D D, Hargrove K L, Hafizi M, Stanchina W E, 1996 IEEE Trans. Microwave Theory and Tech. 44 1165-1167
4. De Los Santos H J, Hafizi M, Liu T, Rensch D B, 1994 Inter. Symp. on Compound Semiconductors 645-650