3 GHz resonant tunneling clocked comparator

Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Volumn , Issue , 1997, Pages 28-34

  Brar, B ^a   Broekaert, T P E ^a   van der Wagt, J P A ^a   Seabaugh, A C ^a   Moise, T S ^a   Morris, F J ^a   Beam III, E A ^a   Frazier, G A ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; SEMICONDUCTOR DEVICE TESTING; TUNNEL DIODES;

HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET); RESONANT TUNNELING DIODES (RTD);

COMPARATOR CIRCUITS;

EID: 0031384198     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/cornel.1997.649339     Document Type: Conference Paper

References (5)