Strain engineering in semiconducting two-dimensional crystals

Journal of Physics Condensed Matter

Volumn 27, Issue 31, 2015, Pages

  Roldán, Rafael ^a,b   Castellanos Gomez, Andrés ^b   Cappelluti, Emmanuele ^c   Guinea, Francisco ^b,d  

^a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^b INSTITUTO MADRILEÑO DE ESTUDIOS AVANZADOS EN NANOCIENCIA IMDEA NANOCIENCIA   (Spain)

^c CNR   (Italy)

^d UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

electronic structure; optoelectronics; strain engineering; two dimensional crystals

Indexed keywords

CRYSTAL STRUCTURE; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; NANOELECTRONICS; OPTOELECTRONIC DEVICES; TRANSITION METALS;

ELASTIC STRAIN FIELDS; EXTERNAL STRAINS; OPTICAL AND ELECTRONIC PROPERTIES; PHYSICAL PROPERTIES OF MATERIALS; SEMICONDUCTING MATERIALS; STRAIN ENGINEERING; TRANSITION METAL DICHALCOGENIDES; TWO-DIMENSIONAL CRYSTALS;

MATERIALS PROPERTIES;

EID: 84937787132     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/27/31/313201     Document Type: Review

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