Superconductivity in two-dimensional NbSe2 field effect transistors

Superconductor Science and Technology

Volumn 26, Issue 12, 2013, Pages

  El Bana, Mohammed S ^a,b   Wolverson, Daniel ^a   Russo, Saverio ^c   Balakrishnan, Geetha ^d   Paul, Don McK ^d   Bending, Simon J ^a  

^a University of Bath   (United Kingdom)

^b Ain Shams University   (Egypt)

^c UNIVERSITY OF EXETER   (United Kingdom)

^d UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BACK-GATE VOLTAGES; COHERENCE LENGTHS; ELECTRON CONCENTRATION; HIGH TEMPERATURE; PERPENDICULAR MAGNETIC FIELDS; RESISTIVE TRANSITION; UPPER CRITICAL FIELDS; ZERO TEMPERATURES;

FIELD EFFECT TRANSISTORS; SUPERCONDUCTING DEVICES; THRESHOLD VOLTAGE;

SUPERCONDUCTIVITY;

EID: 84888321130     PISSN: 09532048     EISSN: 13616668     Source Type: Journal    
DOI: 10.1088/0953-2048/26/12/125020     Document Type: Article

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