Uniaxial strain on graphene: Raman spectroscopy study and band-gap opening

ACS Nano

Volumn 2, Issue 11, 2008, Pages 2301-2305

  Ni, Zhen Hua ^a   Yu, Ting ^a   Lu, Yun Hao ^b   Wang, Ying Ying ^a   Feng, Yuan Ping ^b   Shen, Ze Xiang ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Band gap; Flexible substrate; Graphene; Raman; Strain

Indexed keywords

ENERGY GAP; GALLIUM ALLOYS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SPECTRUM ANALYSIS; SUBSTRATES;

BAND GAP; CARBON BONDS; FLEXIBLE SUBSTRATE; GRAPHENE; K POINTS; RAMAN; RAMAN SPECTRUMS; RED SHIFTS; STRAIN PROCESSES; TUNABLE BAND GAPS; UNIAXIAL STRAINS; UNIAXIAL TENSILE STRAINS;

TENSILE STRAIN;

CARBON; CARBON NANOTUBE; POLYETHYLENE TEREPHTHALATE; SILICON; SILICON DIOXIDE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; MATERIALS TESTING; MECHANICAL STRESS; METHODOLOGY; NANOTECHNOLOGY; NORMAL DISTRIBUTION; RAMAN SPECTROMETRY; SURFACE PROPERTY; TENSILE STRENGTH;

CARBON; CRYSTALLIZATION; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES, CARBON; NORMAL DISTRIBUTION; POLYETHYLENE TEREPHTHALATES; SILICON; SILICON DIOXIDE; SPECTRUM ANALYSIS, RAMAN; STRESS, MECHANICAL; SURFACE PROPERTIES; TENSILE STRENGTH;

EID: 58049208431     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn800459e     Document Type: Article

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