Fast and reliable identification of atomically thin layers of TaSe2 crystals

Nano Research

Volumn 6, Issue 3, 2013, Pages 191-199

  Castellanos Gomez, Andres ^a   Navarro Moratalla, Efrén ^b   Mokry, Guillermo ^c   Quereda, Jorge ^c   Pinilla Cienfuegos, Elena ^b   Agraït, Nicolás ^c,d   van der Zant, Herre S J ^a   Coronado, Eugenio ^b   Steele, Gary A ^a   Rubio Bollinger, Gabino ^c  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b UNIVERSITY OF VALENCIA   (Spain)

^c UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^d INSTITUTO MADRILEÑO DE ESTUDIOS AVANZADOS EN NANOCIENCIA IMDEA NANOCIENCIA   (Spain)

Author keywords

atomically thin layer; layered superconductor; metal dichalcogenide; optical microscopy; Raman spectroscopy

Indexed keywords

EID: 84874939903     PISSN: 19980124     EISSN: 19980000     Source Type: Journal    
DOI: 10.1007/s12274-013-0295-9     Document Type: Article

References (48)

1. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric field effect in atomically thin carbon films. Science2004, 306, 666-669.
2. Novoselov, K. S.; Jiang, D.; Schedin, F.; Booth, T. J.; Khotkevich, V. V.; Morozov, S. V.; Geim, A. K. Two-dimensional atomic crystals. Proc. Natl. Acad. Sci. USA2005, 102, 10451-10453.
3. Ayari, A.; Cobas, E.; Ogundadegbe, O.; Fuhrer, M. S. Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides. J. Appl. Phys. 2007, 101, 014507.
4. 2. Phys. Rev. B2009, 80, 184505.
5. 2 semimetal thin-film channels. Appl. Phys. Lett. 2012, 100, 043109.
6. 2. ACS Nano2010, 4, 2695-2700.
7. Teweldebrhan, D.; Goyal, V.; Rahman, M.; Balandin, A. A. Atomically-thin crystalline films and ribbons of bismuth telluride. Appl. Phys. Lett. 2010, 96, 053107.
8. Dean, C. R.; Young, A. F.; Meric, I.; Lee, C.; Wang, L.; Sorgenfrei, S.; Watanabe, K.; Taniguchi, T.; Kim, P.; Shepard, K. L.; et al. Boron nitride substrates for high-quality graphene electronics. Nat. Nanotechnol. 2010, 5, 722-726.
9. 2. Nano Lett. 2010, 10, 1271-1275.
10. 2 analogues of graphene. Angew. Chem. Int. Ed. 2010, 49, 4059-4062.
11. 2 transistors. Nat. Nanotechnol. 2011, 6, 147-150.
12. Castellanos-Gomez, A.; Wojtaszek, M.; Tombros, N.; Agraït, N.; van Wees, B. J.; Rubio-Bollinger, G. Atomically thin mica flakes and their application as ultrathin insulating substrates for graphene. Small2011, 7, 2491-2497.
13. Castellanos-Gomez, A.; Poot, M.; Amor-Amorós, A.; Steele, G.; van der Zant, H.; Agraït, N.; Rubio-Bollinger, G. Mechanical properties of freely suspended atomically thin dielectric layers of mica. Nano Res. 2012, 5, 550-557.
14. 2 nanosheets. Adv. Mater. 2012, 24, 772-775.
15. 2 phototransistors. ACS Nano2012, 6, 74-80.
16. 2 substrate. Small2012, 8, 966-971.
17. Zeng, Z. Y.; Yin, Z. Y.; Huang, X.; Li, H.; He, Q. Y.; Lu, G.; Boey, F.; Zhang, H. Single-layer semiconducting nanosheets: High-yield preparation and device fabrication. Angew. Chem. Int. Ed. 2011, 50, 11093-11097.
18. Zeng, Z. Y.; Sun, T.; Zhu, J. X.; Huang, X.; Yin, Z. Y.; Lu, G; Fan, Z. X.; Yan, Q. Y.; Hng, H. H.; Zhang, H. An effective method for the fabrication of few-layer-thick inorganic nanosheets. Angew. Chem. Int. Ed. 2012, 51, 9052-9056.
19. 2 thin layers on insulating substrates. Nano Lett. 2012, 12, 1538-1544.
20. 2. Small, in press, DOI: 10. 1002/smll. 201202919.
21. Ferrari, A. C.; Meyer, J. C.; Scardaci, V.; Casiraghi, C.; Lazzeri, M.; Mauri, F.; Piscanec, S.; Jiang, D.; Novoselov, K. S.; Roth, S.; et al. Raman spectrum of graphene and graphene layers. Phys. Rev. Lett. 2006, 97, 187401.
22. Blake, P.; Hill, E. W.; Neto, A. H. C.; Novoselov, K. S.; Jiang, D.; Yang, R.; Booth, T. J.; Geim, A. K. Making graphene visible. Appl. Phys. Lett. 2007, 91, 063124.
23. Casiraghi, C.; Hartschuh, A.; Lidorikis, E.; Qian, H.; Harutyunyan, H.; Gokus, T.; Novoselov, K. S.; Ferrari, A. C. Rayleigh imaging of graphene and graphene layers. Nano Lett. 2007, 7, 2711-2717.
24. Jung, I.; Pelton, M.; Piner, R.; Dikin, D. A.; Stankovich, S.; Watcharotone, S.; Hausner, M.; Ruoff, R. S. Simple approach for high-contrast optical imaging and characterization of graphene-based sheets. Nano Lett. 2007, 7, 3569-3575.
25. 2. Nano Lett. 2007, 7, 2707-2710.
26. Castellanos-Gomez, A.; Agraït, N.; Rubio-Bollinger, G. Optical identification of atomically thin dichalcogenide crystals. Appl. Phys. Lett. 2010, 96, 213116.
27. 2 Sheets. Small2012, 8, 682-686.
28. 2. Phys. Rev. B2010, 82, 155432.
29. 2. Phys. Rev. B2011, 83, 233101.
30. 2. arXiv: 1210. 2659.
31. Nemes-Incze, P.; Osváth, Z.; Kamarás, K.; Biró, L. P. Anomalies in thickness measurements of graphene and few layer graphite crystals by tapping mode atomic force microscopy. Carbon2008, 46, 1435-1442.
32. Castellanos-Gomez, A.; Arroyo, C. R.; Agraït, N.; Rubio-Bollinger, G. Calibration of piezoelectric positioning actuators using a reference voltage-to-displacement transducer based on quartz tuning forks. Microsc. Microanal. 2012, 18, 353-358.
33. Moreno-Moreno, M.; Castellanos-Gomez, A.; Rubio-Bollinger, G.; Gomez-Herrero, J.; Agraït, N. Ultralong natural graphene nanoribbons and their electrical conductivity. Small2009, 5, 924-927.
34. Moser, J.; Verdaguer, A.; Jiménez, D.; Barreiro, A.; Bachtold, A. The environment of graphene probed by electrostatic force microscopy. Appl. Phys. Lett. 2008, 92, 123507.
35. Kvavle, J.; Bell, C.; Henrie, J.; Schultz, S.; Hawkins, A. Improvement to reflective dielectric film color pictures. Opt. Express2004, 12, 5789-5794.
36. 2 at high pressure. Phys. Rev. Lett. 1980, 45, 269-272.
37. Beal, A. R.; Hughes, H. P.; Liang, W. Y. The reflectivity spectra of some group VA transition metal dichalcogenides. J. Phys. C Solid State Phys. 1975, 8, 4236.
38. Wald, G. Human vision and the spectrum. Science1945, 101, 653-658.
39. Graf, D.; Molitor, F.; Ensslin, K.; Stampfer, C.; Jungen, A.; Hierold, C.; Wirtz, L. Spatially resolved Raman spectroscopy of single-and few-layer graphene. Nano Lett. 2007, 7, 238-242.
40. 2: A new direct-gap semiconductor. Phys. Rev. Lett. 2010, 105, 136905.
41. 2. Appl. Phys. Lett. 2011, 99, 102109.
42. Mak, K. F.; Lee, C.; Hone, J.; Shan, J.; Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 2010, 105, 136805.
43. 2. Phys. Rev. Lett. 1976, 37, 1145-1148.
44. Tsang, J.; Shafer, M. Raman spectroscopy of intercalated layered structure compounds. Solid State Commun. 1978, 25, 999-1002.
45. 2 Nanoparticles. J. Phys. Chem. C2007, 111, 16192-16196.
46. 2. Phys. Rev. B2011, 84, 155413.
47. Koh, Y. K.; Bae, M. H.; Cahill, D. G.; Pop, E. Reliably counting atomic planes of few-layer graphene (n & 4). ACS Nano2011, 5, 269-274.
48. 2: On demand generation of a single-layer semiconductor. Nano Lett. 2012, 12, 3187-3192.