Silicene field-effect transistors operating at room temperature

Nature Nanotechnology

Volumn 10, Issue 3, 2015, Pages 227-231

  Tao, Li ^a   Cinquanta, Eugenio ^b   Chiappe, Daniele ^b   Grazianetti, Carlo ^b   Fanciulli, Marco ^b   Dubey, Madan ^c   Molle, Alessandro ^b   Akinwande, Deji ^a  

^a The University of Texas at Austin   (United States)

^b LABORATORIO MDM   (Italy)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; GIANT MAGNETORESISTANCE; GRAIN BOUNDARIES; GRAPHENE; HONEYCOMB STRUCTURES; LOW TEMPERATURE EFFECTS; MONOLAYERS; QUANTUM HALL EFFECT; QUANTUM THEORY; SEMICONDUCTOR DEVICE MANUFACTURE; SILICENE; SPIN HALL EFFECT; TEMPERATURE;

FUNDAMENTAL PROPERTIES; GRAIN BOUNDARY SCATTERING; LOW TEMPERATURE SYNTHESIS; QUANTUM SPIN HALL EFFECT; ROOM TEMPERATURE MOBILITY; SEMICONDUCTOR TECHNOLOGY; TWO-DIMENSIONAL MATERIALS; TWO-DIMENSIONAL SEMICONDUCTORS;

FIELD EFFECT TRANSISTORS;

GRAPHENE; SILICENE; SILICON DERIVATIVE; UNCLASSIFIED DRUG;

AIR; ATOMIC FORCE MICROSCOPY; BINDING AFFINITY; CONTROLLED STUDY; ELECTRODE; ELECTRON TRANSPORT; FIELD EFFECT TRANSISTOR; LETTER; LOW TEMPERATURE; MOLECULAR STABILITY; NANOFABRICATION; PHONON; PRIORITY JOURNAL; QUANTUM MECHANICS; RAMAN SPECTROMETRY; ROOM TEMPERATURE; SURFACE PROPERTY;

EID: 84924668338     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2014.325     Document Type: Letter

References (34)

1. Takeda, K. & Shiraishi, K. Theoretical possibility of stage corrugation in Si and Ge analogs of graphite. Phys. Rev. B 50, 14916-14922 (1994).
2. Cahangirov, S., Topsakal, M., Aktürk, E., Şahin, H. & Ciraci, S. Two- and one-dimensional honeycomb structures of silicon and germanium. Phys. Rev. Lett. 102, 236804 (2009).
3. Liu, C-C., Feng, W. & Yao, Y. Quantum spin Hall effect in silicene and two-dimensional germanium. Phys. Rev. Lett. 107, 076802 (2011).
4. Ni, Z. et al . Tunable bandgap in silicene and germanene. Nano Lett. 12, 113-118 (2011).
5. Lin, C-L. et al. Substrate-induced symmetry breaking in silicene. Phys. Rev. Lett. 110, 076801 (2013).
6. De Padova, P. et al. 1D graphene-like silicon systems: silicene nano-ribbons. J. Phys. Condens. Matter 24, 223001 (2012).
7. Ezawa, M. Valley-polarized metals and quantum anomalous Hall effect in silicene. Phys. Rev. Lett. 109, 055502 (2012).
8. Liu, F., Liu, C-C., Wu, K., Yang, F. & Yao, Y. d+id′ chiral superconductivity in bilayer silicene. Phys. Rev. Lett. 111, 066804 (2013).
9. Xu, C. et al . Giant magnetoresistance in silicene nanoribbons. Nanoscale 4, 3111-3117 (2012).
10. Aufray, B. et al. Graphene-like silicon nanoribbons on Ag(110): a possible formation of silicene. Appl. Phys. Lett. 96, 183102 (2010).
11. Feng, B. et al . Evidence of silicene in honeycomb structures of silicon on Ag(111). Nano Lett. 12, 3507-3511 (2012).
12. 3 two-dimensional silicon nanosheet. J. Phys. Chem. C 117, 16719-16724 (2013).
13. Chiappe, D., Grazianetti, C., Tallarida, G., Fanciulli, M. & Molle, A. Local electronic properties of corrugated silicene phases. Adv. Mater. 24, 5088-5093 (2012).
14. De Padova, P. et al . Multilayer silicene nanoribbons. Nano Lett. 12, 5500-5503 (2012).
15. Vogt, P. et al. Silicene: compelling experimental evidence for graphenelike two-dimensional silicon. Phys. Rev. Lett. 108, 155501 (2012).
16. Molle, A. et al. Hindering the oxidation of silicene with non-reactive encapsulation. Adv. Funct. Mater. 23, 4340-4344 (2013).
17. Scalise, E. et al. Vibrational properties of epitaxial silicene layers on (111) Ag. Appl. Surf. Sci. 291, 113-117 (2014).
18. 2 from first principles. Phys. Rev. B 87, 115418 (2013).
19. Li, L. et al. Black phosphorus field-effect transistors. Nature Nanotech. 9, 372-377 (2014).
20. Liu, H. et al. Phosphorene: an unexplored 2D semiconductor with a high hole mobility. ACS Nano 8, 4033-4041 (2014).
21. Piner, R. et al. Graphene synthesis via magnetic inductive heating of copper substrates. ACS Nano 7, 7495-7499 (2013).
22. Acun, A., Poelsema, B., Zandvliet, H. J. W. & van Gastel, R. The instability of silicene on Ag(111). Appl. Phys. Lett. 103, 263119 (2013).
23. Moras, P., Mentes, T. O., Sheverdyaeva, P. M., Locatelli, A. & Carbone, C. Coexistence of multiple silicene phases in silicon grown on Ag(111). J. Phys. Condens. Matter 26, 185001 (2014).
24. Mannix, A. J., Kiraly, B., Fisher, B. L., Hersam, M. C. & Guisinger, N. P. Silicon growth at the two-dimensional limit on Ag(111). ACS Nano 8, 7538-7547 (2014).
25. Lin, C-L. et al. Structure of silicene grown on Ag(111). Appl. Phys. Exp. 5, 045802 (2012).
26. Gao, J. & Zhao, J. Initial geometries, interaction mechanism and high stability of silicene on Ag(111) surface. Sci. Rep. 2, 861 (2012).
27. Guo, Z-X., Furuya, S., Iwata, J-I. & Oshiyama, A. Absence and presence of Dirac electrons in silicene on substrates. Phys. Rev. B 87, 235435 (2013).
28. Resta, A. et al. Atomic structures of silicene layers grown on Ag(111): scanning tunneling microscopy and noncontact atomic force microscopy observations. Sci. Rep. 3, 2399 (2013).
29. Kim, S. et al. Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric. Appl. Phys. Lett. 94, 062107-062103 (2009).
30. Wang, R. et al. Silicene oxides: formation, structures and electronic properties. Sci. Rep. 3, 3507 (2013).
31. Wong, H-S. P. & Akinwande, D. Carbon Nanotube and Graphene Device Physics (Cambridge Univ. Press, 2011).
32. Cahangirov, S. et al. Electronic structure of silicene on Ag(111): strong hybridization effects. Phys. Rev. B 88, 035432 (2013).
33. Tsoutsou, D., Xenogiannopoulou, E., Golias, E., Tsipas, P. & Dimoulas, A. Evidence for hybrid surface metallic band in (4 x 4) silicene on Ag(111). Appl. Phys. Lett. 103, 231604 (2013).
34. Tsen, A. W. et al. Tailoring electrical transport across grain boundaries in polycrystalline graphene. Science 336, 1143-1146 (2012).