Gate-induced insulating state in bilayer graphene devices

Nature Materials

Volumn 7, Issue 2, 2008, Pages 151-157

  Oostinga, Jeroen B ^a   Heersche, Hubert B ^a   Liu, Xinglan ^a   Morpurgo, Alberto F ^a   Vandersypen, Lieven M K ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; ELECTRONIC EQUIPMENT; ENERGY GAP; FIELD EFFECT TRANSISTORS; INSULATING MATERIALS;

BILAYER GRAPHENE; DOUBLE-GATE DEVICE CONFIGURATION; INSULATING STATES;

GRAPHITE;

EID: 38549085884     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat2082     Document Type: Article

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