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Physical Review Letters

Volumn 99, Issue 21, 2007, Pages

Biased bilayer graphene: Semiconductor with a gap tunable by the electric field effect

(9) Castro, Eduardo V a Novoselov, K S b Morozov, S V b Peres, N M R c Dos Santos, J M B Lopes a Nilsson, Johan d Guinea, F e Geim, A K b Neto, A H Castro d,f

a UNIVERSITY OF PORTO (Portugal)

b UNIVERSITY OF MANCHESTER (United Kingdom)

c UNIVERSITY OF MINHO (Portugal)

d Boston University (United States)

e INSTITUTO DE CIENCIA DE MATERIALES DE MADRID (Spain)

f HARVARD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CYCLOTRONS; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; GALVANOMAGNETIC EFFECTS; QUANTUM THEORY; TUNING;

BILAYER GRAPHENES; ELECTRONIC DENSITY; ELECTRONIC GAP; MIDINFRARED ENERGIES;

SEMICONDUCTOR MATERIALS;

EID: 36249007086 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.99.216802 Document Type: Article

Times cited : (1962)

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