Low-temperature photoluminescence of oxide-covered single-layer MoS 2

Physica Status Solidi - Rapid Research Letters

Volumn 6, Issue 3, 2012, Pages 126-128

  Plechinger, G ^a   Schrettenbrunner, F X ^a   Eroms, J ^a   Weiss, D ^a   Schuller C ^a   Korn, T ^a  

^a UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

MoS 2; Photoluminescence; Two dimensional crystals

Indexed keywords

ANNEALING IN VACUUM; LOW ENERGIES; LOW TEMPERATURE PHOTOLUMINESCENCE; LOW TEMPERATURES; LUMINESCENCE PEAK; MOS 2; OXIDE LAYER; SINGLE LAYER; SURFACE ADSORBATES; TEMPERATURE-INDUCED; THERMAL EXPANSION COEFFICIENTS; TWO-DIMENSIONAL CRYSTALS;

ATOMIC LAYER DEPOSITION; HAFNIUM OXIDES; PHOTOLUMINESCENCE; SILICON COMPOUNDS;

MOLYBDENUM COMPOUNDS;

EID: 84857610473     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201105589     Document Type: Article

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