Two-dimensional mono-elemental semiconductor with electronically inactive defects: The case of phosphorus

Nano Letters

Volumn 14, Issue 12, 2014, Pages 6782-6786

  Liu, Yuanyue ^a   Xu, Fangbo ^a   Zhang, Ziang ^a   Penev, Evgeni S ^a   Yakobson, Boris I ^a  

^a Rice University   (United States)

Author keywords

defects; density functional theory; phosphorus; two dimensional semiconductor

Indexed keywords

CHEMICAL BONDS; DEFECTS; DENSITY FUNCTIONAL THEORY; ELECTRONIC STRUCTURE; ENERGY GAP; GRAIN BOUNDARIES; PHOSPHORUS; POINT DEFECTS;

DEFECTS IN SEMICONDUCTORS; ELECTRONIC DEVICE; ELEMENTAL SEMICONDUCTORS; FIRST-PRINCIPLES STUDY; HIGH-MOBILITY SEMICONDUCTORS; HYDROGEN TERMINATION; INTRINSIC POINT DEFECTS; TWO-DIMENSIONAL SEMICONDUCTORS;

SEMICONDUCTOR DOPING;

EID: 84908603492     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl5021393     Document Type: Article

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