SCOPUS 정보 검색 플랫폼

Solid State Communications

Volumn 155, Issue , 2013, Pages 6-11

Strain-induced self-doping in silicene and germanene from first-principles

(2) Wang, Yanli a Ding, Yi b

a ZHEJIANG SCI TECH UNIVERSITY (China)

b HANGZHOU NORMAL UNIVERSITY (China)

Author keywords

A. Silicene and germanene; D. Electronic structure; D. Strain effect; E. First principles calculation

Indexed keywords

A. SILICENE AND GERMANENE; COMPRESSIVE STRAIN; DIRAC POINT; E. FIRST-PRINCIPLES CALCULATIONS; FIRST-PRINCIPLES CALCULATION; P-TYPE DOPING; SELF-DOPING; STRAIN EFFECT;

CALCULATIONS; ELECTRONIC STRUCTURE; FERMI LEVEL; GERMANIUM; GRAPHENE; NANOSHEETS;

STRAIN;

EID: 84872535226 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/j.ssc.2012.10.044 Document Type: Article

Times cited : (143)

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