Tuning the optical, magnetic, and electrical properties of ReSe2 by nanoscale strain engineering

Nano Letters

Volumn 15, Issue 3, 2015, Pages 1660-1666

  Yang, Shengxue ^a   Wang, Cong ^b,c   Sahin, Hasan ^d   Chen, Hui ^a   Li, Yan ^a   Li, Shu Shen ^a,e   Suslu, Aslihan ^f   Peeters, Francois M ^d   Liu, Qian ^b,c   Li, Jingbo ^a,e   Tongay, Sefaattin ^f  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b NATIONAL CENTER FOR NANOSCIENCE AND TECHNOLOGY   (China)

^c NANKAI UNIVERSITY   (China)

^d UNIVERSITY OF ANTWERP   (Belgium)

^e UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^f Arizona State University   (United States)

Author keywords

2D materials; excitonics; magnetism; photoluminescence; strain engineering; Transition metal dichalcogenides

Indexed keywords

ELECTROMECHANICAL DEVICES; FIELD EFFECT TRANSISTORS; MAGNETISM; NANOMAGNETICS; PHOTOLUMINESCENCE; PHOTONIC DEVICES; PIEZOELECTRIC ACTUATORS; RED SHIFT; RHENIUM COMPOUNDS; SELENIUM COMPOUNDS; TRANSITION METALS; TUNING;

ARTIFICIAL MUSCLE ACTUATOR; ATOMIC COMPOSITIONS; EXCITONICS; PHOTOLUMINESCENCE PEAK; STRAIN ENGINEERING; STRETCHABLE ELECTRODES; TRADITIONAL MATERIALS; TRANSITION METAL DICHALCOGENIDES;

STRAIN;

EID: 85102517441     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl504276u     Document Type: Article

References (26)

1. Li, J.; Shan, Z.; Ma, E. Elastic strain engineering for unprecedented materials properties MRS Bull. 2014, 39, 108-114
2. Zhu, T.; Li, J. Ultra-strength materials Prog. Mater. Sci. 2010, 55, 710
3. 2 ACS Nano 2011, 5, 9703-9709
4. Cooper, R. C.; Lee, C.; Marianetti, C. A.; Wei, X.; Hone, J.; Kysar, J. W. Phys. Rev. B 2013, 87, 035423
5. Lee, J.; Yamazaki, S.; Yun, H.; Park, J.; Kennedy, G. P.; Kim, G.; Pietzsch, O.; Wiesendanger, R.; Lee, S.; Hong, S.; Dettlaff-Weglikowska, U.; Roth, S. Modification of Electrical Properties of Graphene by Substrate-Induced Nanomodulation Nano Lett. 2013, 13, 3494-3500
6. Zhang, D.; Seifert, G.; Chang, K. Strain-Induced Pseudomagnetic Fields in Twisted Graphene Nanoribbons Phys. Rev. Lett. 2014, 112, 096805
7. Xu, K.; Cao, P.; Heath, J. R. Scanning Tunneling Microscopy Characterization of the Electrical Properties of Wrinkles in Exfoliated Graphene Monolayers Nano Lett. 2009, 9, 4446-4451
8. Zhu, W.; Low, T.; Perebeinos, V.; Bol, A. A.; Zhu, Y.; Yan, H.; Tersoff, J.; Avouris, P. Structure and Electronic Transport in Graphene Wrinkles Nano Lett. 2012, 12, 3431-3436
9. 2 ACS Nano 2012, 6, 9727-9736
10. 2 Monolayers (X = S, Se) and Their Strain-Induced Tunable Magnetic Properties ACS Nano 2012, 6, 1695-1701
11. 2 Nano Lett. 2013, 13, 3626-3630
12. 2 Nano Lett. 2013, 13, 5361-5366
13. 2 nanosheet transistors Nanoscale 2014, 6, 7226-7231
14. Ho, C. H.; Huang, C. E. Optical property of the near band-edge transitions in rhenium disulfide and diselenide J. Alloys Compd. 2004, 383, 74-79
15. 2 layered semiconductors J. Phys.: Condens. Matter 2004, 16, 5937-5944
16. 2 Nano Lett. 2014, 14, 4592-4597
17. Wang, Y.; Yang, R.; Shi, Z.; Zhang, L.; Shi, D.; Wang, E.; Zhang, G. Super-Elastic Graphene Ripples for Flexible Strain Sensors ACS Nano 2011, 5, 3645-3650
18. Vella, D.; Bico, J.; Boudaoud, A.; Roman, B.; Reis, P. M. The macroscopic delamination of thin films from elastic substrates Proc. Natl. Acad. Sci. U.S.A. 2009, 106, 10901-10906
19. 2 Nano Lett. 2013, 13, 2931-2936
20. Bouwes Bavinck, M.; Zieliński, M.; Witek, B. J.; Zehender, T.; Bakkers, E. P.; Zwiller, V. Controlling a nanowire quantum dot band gap using a straining dielectric envelope Nano Lett. 2012, 12, 6206-6211
21. Trotta, R.; Atkinson, P.; Plumhof, J.; Zallo, E.; Rezaev, R.; Kumar, S.; Baunack, S.; Schröter, J.; Rastelli, A.; Schmidt, O. Nanomembrane quantum-light-emitting diodes integrated onto piezoelectric actuators Adv. Mater. 2012, 24, 2668-2672
22. Zabel, J.; Nair, R. R.; Ott, A.; Georgiou, T.; Geim, A. K.; Novoselov, K. S.; Casiraghi, C. Raman Spectroscopy of Graphene and Bilayer under Biaxial Strain: Bubbles and Balloons Nano Lett. 2012, 12, 617-621
23. Kou, L.; Tang, C.; Guo, W.; Chen, C. Tunable Magnetism in Strained Graphene with Topological Line Defect ACS Nano 2011, 5, 1012-1017
24. Ma, Y.; Dai, Y.; Guo, M.; Niu, C.; Yu, L.; Huang, B. Strain-Induced Magnetic Transitions in Half-Fluorinated Single Layers of BN, GaN and Graphene Nanoscale 2011, 3, 2301-2306
25. 2 and Graphene Nanosheets by Magnetic Force Microscopy ACS Nano 2013, 7, 2842-2849
26. Nemes-Incze, P.; Osváth, Z.; Kamarás, K.; Biró, L. Anomalies in thickness measurements of graphene and few layer graphite crystals by tapping mode atomic force microscopy Carbon 2008, 46, 1435-1442