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Applied Physics Letters

Volumn 93, Issue 10, 2008, Pages

Strain dependence of indirect band gap for strained silicon on insulator wafers

(5) Munguia J a Bremond, G a Bluet, J M a Hartmann, J M b Mermoux, M c

a INSTITUT DES NANOTECHNOLOGIES DE LYON (France)

b CEA LETI (France)

c LEPMI (France)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; GALLIUM ALLOYS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON;

INDIRECT BAND-GAP; STRAINED SILICON; STRAINED SILICON ON INSULATOR;

SILICON WAFERS;

EID: 51749093724 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2978241 Document Type: Article

Times cited : (38)

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