Strain-induced gap modification in black phosphorus

Physical Review Letters

Volumn 112, Issue 17, 2014, Pages

  Rodin, A S ^a   Carvalho, A ^b   Castro Neto, A H ^a,b  

^a BOSTON UNIVERSITY   (United States)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

HAMILTONIANS;

EFFECT OF STRAIN; FIRST PRINCIPLES; GAP SIZE; LOCALIZED ORBITALS; NUMERICAL CALCULATION; SEMICONDUCTOR-METAL TRANSITION; SINGLE LAYER; TIGHT BINDING MODEL;

PHOSPHORUS;

EID: 84899721921     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.112.176801     Document Type: Article

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