-
1
-
-
7444220645
-
Electric field in atomically thin carbon films
-
DOI 10.1126/science.1102896
-
Novoselov, K. S. et al. Electric field effect in atomically thin carbon films. Science 306, 666-669 (2004). (Pubitemid 39440910)
-
(2004)
Science
, vol.306
, Issue.5696
, pp. 666-669
-
-
Novoselov, K.S.1
Geim, A.K.2
Morozov, S.V.3
Jiang, D.4
Zhang, Y.5
Dubonos, S.V.6
Grigorieva, I.V.7
Firsov, A.A.8
-
2
-
-
27744534165
-
Two-dimensional gas of massless Dirac fermions in graphene
-
DOI 10.1038/nature04233, PII N04233
-
Novoselov, K. S. et al. Two-dimensional gas of massless Dirac fermions in graphene. Nature 438, 197-200 (2005). (Pubitemid 41599867)
-
(2005)
Nature
, vol.438
, Issue.7065
, pp. 197-200
-
-
Novoselov, K.S.1
Geim, A.K.2
Morozov, S.V.3
Jiang, D.4
Katsnelson, M.I.5
Grigorieva, I.V.6
Dubonos, S.V.7
Firsov, A.A.8
-
3
-
-
27744475163
-
Experimental observation of the quantum Hall effect and Berry's phase in graphene
-
DOI 10.1038/nature04235, PII N04235
-
Zhang, Y., Tan, Y. W., Stormer, H. L. & Kim, P. Experimental observation of the quantum Hall effect and Berry's phase in graphene. Nature 438, 201-204 (2005). (Pubitemid 41599868)
-
(2005)
Nature
, vol.438
, Issue.7065
, pp. 201-204
-
-
Zhang, Y.1
Tan, Y.-W.2
Stormer, H.L.3
Kim, P.4
-
4
-
-
45349092986
-
Fine structure constant defines visual transparency of graphene
-
DOI 10.1126/science.1156965
-
Nair, R. R. et al. Fine structure constant defines visual transparency of graphene. Science 320, 1308 (2008). (Pubitemid 351929460)
-
(2008)
Science
, vol.320
, Issue.5881
, pp. 1308
-
-
Nair, R.R.1
Blake, P.2
Grigorenko, A.N.3
Novoselov, K.S.4
Booth, T.J.5
Stauber, T.6
Peres, N.M.R.7
Geim, A.K.8
-
5
-
-
56249114827
-
Measurement of the optical conductivity of graphene
-
Mak, K. F. et al. Measurement of the optical conductivity of graphene. Phys. Rev. Lett. 101, 196405 (2008).
-
(2008)
Phys. Rev. Lett.
, vol.101
, pp. 196405
-
-
Mak, K.F.1
-
6
-
-
76249106631
-
100-GHz transistors from wafer-scale epitaxial graphene
-
Lin, Y. M. et al. 100-GHz transistors from wafer-Scale epitaxial graphene. Science 327, 662 (2010).
-
(2010)
Science
, vol.327
, pp. 662
-
-
Lin, Y.M.1
-
7
-
-
47749150628
-
Measurement of the elastic properties and intrinsic strength of monolayer graphene
-
DOI 10.1126/science.1157996
-
Lee, C., Wei, X., Kysar, J. W. & Hone, J. Measurement of the elastic properties and intrinsic strength of monolayer graphene. Science 321, 385-388 (2008). (Pubitemid 352029970)
-
(2008)
Science
, vol.321
, Issue.5887
, pp. 385-388
-
-
Lee, C.1
Wei, X.2
Kysar, J.W.3
Hone, J.4
-
8
-
-
77956280459
-
Graphene photonics and optoelectronics
-
Bonaccorso, F., Sun, Z., Hasan, T. & Ferrari, A. C. Graphene photonics and optoelectronics. Nat. Photon. 4, 611-622 (2010).
-
(2010)
Nat. Photon.
, vol.4
, pp. 611-622
-
-
Bonaccorso, F.1
Sun, Z.2
Hasan, T.3
Ferrari, A.C.4
-
9
-
-
63449116426
-
Controlled formation of sharp zigzag and armchair edges in graphitic nanoribbons
-
Jia, X. et al. Controlled formation of sharp zigzag and armchair edges in graphitic nanoribbons. Science 323, 1701-1705 (2009).
-
(2009)
Science
, vol.323
, pp. 1701-1705
-
-
Jia, X.1
-
10
-
-
77955231284
-
Graphene transistors
-
Schwierz, F. Graphene transistors. Nat. Nanotechnol. 5, 487-496 (2010).
-
(2010)
Nat. Nanotechnol.
, vol.5
, pp. 487-496
-
-
Schwierz, F.1
-
11
-
-
77957908617
-
Boron nitride substrates for high-quality graphene electronics
-
Dean, C. R. et al. Boron nitride substrates for high-quality graphene electronics. Nat. Nantechnol. 5, 722-726 (2010).
-
(2010)
Nat. Nantechnol.
, vol.5
, pp. 722-726
-
-
Dean, C.R.1
-
12
-
-
72449128239
-
Atomically thin hexagonal boron nitride probed by ultrahigh-resolution transmission electron microscopy
-
Alem, S. et al. Atomically thin hexagonal boron nitride probed by ultrahigh-resolution transmission electron microscopy. Phys. Rev. B 80, 155425 (2009).
-
(2009)
Phys. Rev. B
, vol.80
, pp. 155425
-
-
Alem, S.1
-
13
-
-
79953031816
-
Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride
-
Xue, J. et al. Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride. Nat. Mater. 10, 282-285 (2011).
-
(2011)
Nat. Mater.
, vol.10
, pp. 282-285
-
-
Xue, J.1
-
14
-
-
23044442056
-
Two-dimensional atomic crystals
-
DOI 10.1073/pnas.0502848102
-
Novoselov, K. S. et al. Two-dimensional atomic crystals. Proc. Natl Acad. Sci. USA 102, 10451-10453 (2005). (Pubitemid 41061574)
-
(2005)
Proceedings of the National Academy of Sciences of the United States of America
, vol.102
, Issue.30
, pp. 10451-10453
-
-
Novoselov, K.S.1
Jiang, D.2
Schedin, F.3
Booth, T.J.4
Khotkevich, V.V.5
Morozov, S.V.6
Geim, A.K.7
-
16
-
-
77957204738
-
2: A new direct-gap semiconductor
-
2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010).
-
(2010)
Phys. Rev. Lett.
, vol.105
, pp. 136805
-
-
Mak, K.F.1
-
19
-
-
84878942676
-
Strong light-matter interactions in heterostructures of atomically thin films
-
Britnell, L. et al. Strong light-matter interactions in heterostructures of atomically thin films. Science 340, 1311-1314 (2013).
-
(2013)
Science
, vol.340
, pp. 1311-1314
-
-
Britnell, L.1
-
20
-
-
84875413255
-
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
-
Chhowalla, M. et al. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 5, 263-275 (2013).
-
(2013)
Nat. Chem.
, vol.5
, pp. 263-275
-
-
Chhowalla, M.1
-
21
-
-
84863855836
-
2 p-FETs with chemically doped contacts
-
2 p-FETs with chemically doped contacts. Nano Lett. 12, 3788-3792 (2012).
-
(2012)
Nano Lett.
, vol.12
, pp. 3788-3792
-
-
Fang, H.1
-
22
-
-
84866027034
-
2 transistors
-
2 transistors. Nano Lett. 12, 4674-4680 (2012).
-
(2012)
Nano Lett.
, vol.12
, pp. 4674-4680
-
-
Wang, H.1
-
25
-
-
78751522718
-
The effect of isotropic and anisotropic scattering in drain region of ballistic channel diode
-
Abudukelimu, A. et al. The effect of isotropic and anisotropic scattering in drain region of ballistic channel diode. IEEE Int. Conf. Solid State Integr. Circuit Technol. 1247-1249 (2010).
-
(2010)
IEEE Int. Conf. Solid State Integr. Circuit Technol.
, pp. 1247-1249
-
-
Abudukelimu, A.1
-
26
-
-
0038733750
-
Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects
-
Bufler, F. & Fichtner, W. Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects. IEEE Trans. Electron Devices 50, 278-284 (2003).
-
(2003)
IEEE Trans. Electron Devices
, vol.50
, pp. 278-284
-
-
Bufler, F.1
Fichtner, W.2
-
27
-
-
0038265395
-
Anisotropic ballistic in-plane transport of electrons in strained Si
-
Bufler, F., Keith, S. & Meinerzhagen, B. Anisotropic ballistic in-plane transport of electrons in strained Si. Proc. SISPAD 239-242 (1998).
-
(1998)
Proc. SISPAD
, pp. 239-242
-
-
Bufler, F.1
Keith, S.2
Meinerzhagen, B.3
-
28
-
-
0038573209
-
The electrical properties of black phosphorus
-
Keyes, R. The electrical properties of black phosphorus. Phys. Rev. 92, 580-584 (1953).
-
(1953)
Phys. Rev.
, vol.92
, pp. 580-584
-
-
Keyes, R.1
-
29
-
-
36849127417
-
Electrical and optical properties of crystalline black phosphorus
-
Warschauer, D. Electrical and optical properties of crystalline black phosphorus. J. Appl. Phys. 34, 1853-1860 (1963).
-
(1963)
J. Appl. Phys.
, vol.34
, pp. 1853-1860
-
-
Warschauer, D.1
-
30
-
-
0013390866
-
Crystal structures adopted by black phosphorus at high pressures
-
Jamieson, J. Crystal structures adopted by black phosphorus at high pressures. Science 139, 1291-1292 (1963).
-
(1963)
Science
, vol.139
, pp. 1291-1292
-
-
Jamieson, J.1
-
31
-
-
0039534545
-
Superconducting phosphorus
-
Wittig, J. & Matthias, B. T. Superconducting phosphorus. Science 160, 994-995 (1968).
-
(1968)
Science
, vol.160
, pp. 994-995
-
-
Wittig, J.1
Matthias, B.T.2
-
32
-
-
0019010305
-
Synthesis and some properties of black phosphorus single crystals
-
Maruyama, Y., Suzuki, S., Kobayashi, K. & Tanuma, S. Synthesis and some properties of black phosphorus single crystals. Physica 105B, 99-102 (1981).
-
(1981)
Physica
, vol.105 B
, pp. 99-102
-
-
Maruyama, Y.1
Suzuki, S.2
Kobayashi, K.3
Tanuma, S.4
-
33
-
-
30244439305
-
Raman and infrared reflection spectroscopy in black phosphorus
-
Sugai, S. Raman and infrared reflection spectroscopy in black phosphorus. Solid State Commun. 53, 753-755 (1985).
-
(1985)
Solid State Commun.
, vol.53
, pp. 753-755
-
-
Sugai, S.1
-
34
-
-
36149045716
-
Band structure and optical properties of black phosphorus
-
Asahina, H. & Morita, A. Band structure and optical properties of black phosphorus. J. Phys. C Solid State Phys. 17, 1839-1852 (1984).
-
(1984)
J. Phys. C Solid State Phys.
, vol.17
, pp. 1839-1852
-
-
Asahina, H.1
Morita, A.2
-
35
-
-
84869387852
-
Electronic band structure of black phosphorus studied by angle-resolved ultraviolet photoelectron spectroscopy
-
Takahashi, T. et al. Electronic band structure of black phosphorus studied by angle-resolved ultraviolet photoelectron spectroscopy. J. Phys. C Solid State Phys. 18, 825-836 (1985).
-
(1985)
J. Phys. C Solid State Phys.
, vol.18
, pp. 825-836
-
-
Takahashi, T.1
-
36
-
-
0022698886
-
Semiconducting black phosphorus
-
Morita, A. Semiconducting black phosphorus. Appl. Phys. A 39, 227-242 (1986).
-
(1986)
Appl. Phys. A
, vol.39
, pp. 227-242
-
-
Morita, A.1
-
37
-
-
79251526172
-
Ab initio studies on atomic and electronic structures of black phosphorus
-
Du, Y., Ouyang, C., Shi, S. & Lei, M. Ab initio studies on atomic and electronic structures of black phosphorus. J. Appl. Phys. 107, 093718 (2010).
-
(2010)
J. Appl. Phys.
, vol.107
, pp. 093718
-
-
Du, Y.1
Ouyang, C.2
Shi, S.3
Lei, M.4
-
38
-
-
84904674050
-
-
Preprint at
-
Tran, V., Soklaski, R., Liang, Y. & Yang, L. Tunable band gap and anisotropic optical response in few-layer black phosphorus. Preprint at http://arxiv.org/abs/1402.4192 (2014).
-
(2014)
Tunable Band Gap and Anisotropic Optical Response in Few-layer Black Phosphorus
-
-
Tran, V.1
Soklaski, R.2
Liang, Y.3
Yang, L.4
-
39
-
-
84904645720
-
-
Preprint at
-
Qiao, J., Kong, X., Hu, Z., Yang, F. & Ji, W. Few-layer black phosphorus: emerging 2D semiconductor with high anisotropic carrier mobility and linear dichroism. Preprint at http://arxiv.org/abs/1401.5045 (2014).
-
(2014)
Few-layer Black Phosphorus: Emerging 2D Semiconductor with High Anisotropic Carrier Mobility and Linear Dichroism
-
-
Qiao, J.1
Kong, X.2
Hu, Z.3
Yang, F.4
Ji, W.5
-
40
-
-
84899721921
-
Strain-induced gap modification in black phosphorus
-
Rodin, A. S., Carvalho, A. & Castro Neto, A. H. Strain-induced gap modification in black phosphorus. Phys. Rev. Lett. 112, 176801 (2014).
-
(2014)
Phys. Rev. Lett.
, vol.112
, pp. 176801
-
-
Rodin, A.S.1
Carvalho, A.2
Castro Neto, A.H.3
-
41
-
-
84861093422
-
Tunable infrared plasmonic devices using graphene/insulator stacks
-
Yan, H. et al. Tunable infrared plasmonic devices using graphene/insulator stacks. Nat. Nanotechnol. 7, 330-334 (2012).
-
(2012)
Nat. Nanotechnol.
, vol.7
, pp. 330-334
-
-
Yan, H.1
-
42
-
-
84877576635
-
Damping pathways of mid-infrared plasmons in graphene nanostructures
-
Yan, H. et al. Damping pathways of mid-infrared plasmons in graphene nanostructures. Nat. Photon. 7, 394-399 (2013).
-
(2013)
Nat. Photon.
, vol.7
, pp. 394-399
-
-
Yan, H.1
-
43
-
-
0007039185
-
Electronic structure of black phosphorus in self-consistent pseudopotential approach
-
Asahina, H., Shindo, K. & Morita, A. Electronic structure of black phosphorus in self-consistent pseudopotential approach. J. Phys. Soc. Jpn 51, 1193-1199 (1982).
-
(1982)
J. Phys. Soc. Jpn
, vol.51
, pp. 1193-1199
-
-
Asahina, H.1
Shindo, K.2
Morita, A.3
-
44
-
-
0031276914
-
Raman study of black phosphorus up to 13 GPa
-
PII S0038109897003256
-
Akahama, Y., Kobayashi, M. & Kawamura, H. Raman study of black phosphorus up to 13GPa. Solid State Commun. 104, 311-315 (1997). (Pubitemid 127400788)
-
(1997)
Solid State Communications
, vol.104
, Issue.6
, pp. 311-315
-
-
Akahama, Y.1
Kobayashi, M.2
Kawamura, H.3
-
46
-
-
61749093119
-
The effects of substrate phonon mode scattering on transport in carbon nanotubes
-
Perebeinos, V., Rotkin, S., Petrov, A. G. & Avouris, P. The effects of substrate phonon mode scattering on transport in carbon nanotubes. Nano Lett. 9, 312-316 (2009).
-
(2009)
Nano Lett.
, vol.9
, pp. 312-316
-
-
Perebeinos, V.1
Rotkin, S.2
Petrov, A.G.3
Avouris, P.4
-
47
-
-
43149118786
-
Charged-impurity scattering in graphene
-
Chen, J. H. et al. Charged-impurity scattering in graphene. Nat. Phys. 4, 377-381 (2008).
-
(2008)
Nat. Phys.
, vol.4
, pp. 377-381
-
-
Chen, J.H.1
-
48
-
-
77954737391
-
Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene
-
Zhu, W., Perebeinos, V., Freitag, M. & Avouris, P. Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene. Phys. Rev. B 80, 235402 (2009).
-
(2009)
Phys. Rev. B
, vol.80
, pp. 235402
-
-
Zhu, W.1
Perebeinos, V.2
Freitag, M.3
Avouris, P.4
-
50
-
-
84894608525
-
Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition
-
Zhu, W. et al. Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition. Nat. Commun. 5, 3087 (2014).
-
(2014)
Nat. Commun.
, vol.5
, pp. 3087
-
-
Zhu, W.1
-
51
-
-
84901193930
-
Black phosphorus field-effect transistors
-
Li, L. et al. Black phosphorus field-effect transistors. Nat. Nanotechnol. 9, 372-377 (2014).
-
(2014)
Nat. Nanotechnol.
, vol.9
, pp. 372-377
-
-
Li, L.1
-
52
-
-
84898060562
-
Phosphorene: An unexplored 2D semiconductor with a high hole mobility
-
Liu, H. et al. Phosphorene: an unexplored 2D semiconductor with a high hole mobility. ACS Nano 8, 4033-4041 (2014).
-
(2014)
ACS Nano
, vol.8
, pp. 4033-4041
-
-
Liu, H.1
-
53
-
-
84896300940
-
Electric field effect in ultrathin black phosphorus
-
Koenig, S., Doganov, R., Schmidt, H., Castro Neto, A. & Ozyilmaz, B. Electric field effect in ultrathin black phosphorus. Appl. Phys. Lett. 104, 103106 (2014).
-
(2014)
Appl. Phys. Lett.
, vol.104
, pp. 103106
-
-
Koenig, S.1
Doganov, R.2
Schmidt, H.3
Castro Neto, A.4
Ozyilmaz, B.5
|