Reconfigurable ion gating of 2H-MoTe2 field-effect transistors using poly(ethylene oxide)-CsClO4 solid polymer electrolyte

ACS Nano

Volumn 9, Issue 5, 2015, Pages 4900-4910

  Xu, Huilong ^a   Fathipour, Sara ^a   Kinder, Erich W ^a   Seabaugh, Alan C ^a   Fullerton Shirey, Susan K ^a  

^a University of Notre Dame   (United States)

Author keywords

electrostatic gating; field effect transistor; molybdenum ditelluride; p n junction; poly(ethylene oxide); polymer electrolyte; transition metal dichalcogenides

Indexed keywords

CESIUM COMPOUNDS; DANGLING BONDS; ELECTRIC FIELDS; ELECTROCHEMICAL ELECTRODES; ENERGY GAP; ETHYLENE; FIELD EFFECT TRANSISTORS; GLASS TRANSITION; MOLYBDENUM COMPOUNDS; POLYETHYLENE OXIDES; SEMICONDUCTOR JUNCTIONS; SOLID ELECTROLYTES; TELLURIUM COMPOUNDS; TRANSITION METALS;

ELECTRIC DOUBLE LAYER CAPACITANCE; IN-PLANE ELECTRIC FIELDS; MOLYBDENUM DITELLURIDE; P-N JUNCTION; POLYMER ELECTROLYTE; SHEET CARRIER DENSITIES; SOLID POLYMER ELECTROLYTES; TRANSITION METAL DICHALCOGENIDES;

POLYELECTROLYTES;

EID: 84930668480     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn506521p     Document Type: Article

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