Mobility enhancement and highly efficient gating of monolayer MoS 2 transistors with polymer electrolyte

Journal of Physics D: Applied Physics

Volumn 45, Issue 34, 2012, Pages

  Lin, Ming Wei ^a   Liu, Lezhang ^a   Lan, Qing ^a   Tan, Xuebin ^b   Dhindsa, Kulwinder S ^a   Zeng, Peng ^b   Naik, Vaman M ^c   Cheng, Mark Ming Cheng ^b   Zhou, Zhixian ^a  

^a WAYNE STATE UNIVERSITY   (United States)

^b Wayne State University   (United States)

^c UNIVERSITY OF MICHIGAN DEARBORN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MOBILITY; DEVICE CHARACTERISTICS; ELECTRICAL CHARACTERIZATION; FIELD-EFFECT MOBILITIES; LITHIUM PERCHLORATE; MOBILITY ENHANCEMENT; MOLYBDENUM DISULFIDE; ON/OFF RATIO; POLYMER ELECTROLYTE; SUBTHRESHOLD SWING; THIN LAYERS;

CONTACT RESISTANCE; FIELD EFFECT TRANSISTORS; INORGANIC COMPOUNDS; LITHIUM; MOLYBDENUM; MONOLAYERS; POLYELECTROLYTES; POLYETHYLENE OXIDES;

MOLYBDENUM COMPOUNDS;

EID: 84865085664     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/45/34/345102     Document Type: Article

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