Electrically switchable chiral light-emitting transistor

Science

Volumn 344, Issue 6185, 2014, Pages 725-728

  Zhang, Y J ^a   Oka, T ^a   Suzuki, R ^a   Ye, J T ^a,b,c   Iwasa, Y ^a,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF GRONINGEN   (Netherlands)

^c RIKEN Center for Emergent Matter Science   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSITION ELEMENT; TUNGSTEN DERIVATIVE; TUNGSTEN DISELENIDE; UNCLASSIFIED DRUG;

ELECTRIC FIELD; ELECTRONIC EQUIPMENT; LUMINESCENCE; OPTICAL METHOD; POLARIZATION; TUNGSTEN;

ARTICLE; CHIRALITY; CIRCULAR DICHROISM; CRYSTAL STRUCTURE; ELECTRIC CURRENT; ELECTRIC FIELD; ELECTRIC POTENTIAL; ELECTRON; FIELD EFFECT TRANSISTOR; GLASS TRANSITION TEMPERATURE; LIGHT; LIGHT EMITTING DIODE; LUMINESCENCE; MAGNETIC FIELD; PHOTOLUMINESCENCE; POLARIZATION; PRIORITY JOURNAL; SEMICONDUCTOR; STATIC ELECTRICITY;

EID: 84900441707     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.1251329     Document Type: Article

References (35)

1. I. Žutić, J. Fabian, S. Das Sarma, Rev. Mod. Phys. 76, 323-410 (2004).
2. J. F. Sherson et al., Nature 443, 557-560 (2006).
3. T. Oka, H. Aoki, Phys. Rev. B 79, 081406(R) (2009).
4. Y. H. Wang, H. Steinberg, P. Jarillo-Herrero, N. Gedik, Science 342, 453-457 (2013).
5. R. Fiederling et al., Nature 402, 787-790 (1999).
6. K. Konishi et al., Phys. Rev. Lett. 106, 057402 (2011).
7. Y. Yang, R. C. da Costa, D. M. Smilgies, A. J. Campbell, M. J. Fuchter, Adv. Mater. 25, 2624-2628 (2013).
8. D. Xiao, G. B. Liu, W. Feng, X. Xu, W. Yao, Phys. Rev. Lett. 108, 196802 (2012).
9. Z. Y. Zhu, Y. C. Cheng, U. Schwingenschlögl, Phys. Rev. B 84, 153402 (2011).
10. A. Splendiani et al., Nano Lett. 10, 1271-1275 (2010).
11. K. F. Mak, K. He, J. Shan, T. F. Heinz, Nat. Nanotechnol. 7, 494-498 (2012).
12. H. Zeng, J. Dai, W. Yao, D. Xiao, X. Cui, Nat. Nanotechnol. 7, 490-493 (2012).
13. T. Cao et al., Nat. Commun. 3, 887 (2012).
14. A. M. Jones et al., Nat. Nanotechnol. 8, 634-638 (2013).
15. K. F. Mak et al., Nat. Mater. 12, 207-211 (2013).
16. S. Wu et al., Nat. Phys. 9, 149-153 (2013).
17. Y. Song, H. Dery, Phys. Rev. Lett. 111, 026601 (2013).
18. Materials and methods are available as supplementary materials on Science Online.
19. Y. J. Zhang, J. T. Ye, Y. Yomogida, T. Takenobu, Y. Iwasa, Nano Lett. 13, 3023-3028 (2013).
20. V. Podzorov, M. E. Gershenson, Ch. Kloc, R. Zeis, F. Bucher, Appl. Phys. Lett. 84, 3301-3303 (2004).
21. Y. Zhang, J. Ye, Y. Matsuhashi, Y. Iwasa, Nano Lett. 12, 1136-1140 (2012).
22. J. T. Ye et al ., Science 338, 1193-1196 (2012).
23. D. Braga, I. Gutiérrez Lezama, H. Berger, A. F. Morpurgo, Nano Lett. 12, 5218-5223 (2012).
24. H. T. Yuan et al., Nat. Phys. 9, 563-569 (2013).
25. J. Zaumseil, R. H. Friend, H. Sirringhaus, Nat. Mater. 5, 69-74 (2006).
26. S. Z. Bisri et al., Adv. Mater. 23, 2753-2758 (2011).
27. R. S. Sundaram et al., Nano Lett. 13, 1416-1421 (2013).
28. A. Pospischil, M. M. Furchi, T. Mueller, Nat. Nanotech. 9, 257-261 (2014).
29. B. W. H. Baugher, H. O. H. Churchill, Y. Yang, P. Jarillo-Herrero, Nat. Nanotech. 9, 262-267 (2014).
30. J. S. Ross et al., Nat. Nanotechnol. 9, 268-272 (2014).
31. J. S. Ross et al., Nat. Commun. 4, 1474 (2013).
32. This process is not essential for circularly polarized EL and polarization reversal. Also, electrical switching can be achieved with solid gate devices, in principle.
33. N. W. Ashcroft, N. D. Mermin, Solid State Physics (Thomson Learning, Stamford, CN, 1976), chap. 12.
34. A. Kormányos et al., Phys. Rev. B 88, 045416 (2013).
35. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981), chaps. 1 and 2.