A review of core compact models for undoped double-gate SOI MOSFETs

IEEE Transactions on Electron Devices

Volumn 54, Issue 1, 2007, Pages 131-140

  Ortiz Conde, Adelmo ^a   García Sánchez, Francisco J ^a   Muci, Juan ^a   Malobabic, Slavica ^b   Liou, Juin J ^b,c  

^a UNIVERSIDAD SIMÓN BOLÍVAR   (Venezuela)

^b University of Central Florida   (United States)

^c ZHEJIANG UNIVERSITY   (China)

Author keywords

Asymmetric double gate (DG) MOSFET; Drain current model; Intrinsic channel; MOS compact modeling; Multigate MOSFET; Silicon on insulator (SOI) MOSFET; Symmetric DG MOSFET; Undoped body MOS

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC DRIVES; LSI CIRCUITS; MATHEMATICAL MODELS; SILICON ON INSULATOR TECHNOLOGY;

CURRENT DRIVE; DRAIN-CURRENT MODEL; INTRINSIC CHANNEL; SHORT-CHANNEL EFFECTS;

MOSFET DEVICES;

EID: 33846059690     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.887046     Document Type: Review

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