Electron and hole mobilities in single-layer WSe2

ACS Nano

Volumn 8, Issue 7, 2014, Pages 7180-7185

  Allain, Adrien ^a   Kis, Andras ^a  

^a EPFL   (Switzerland)

Author keywords

contacts; layered semiconductor; mobility; transition metal dichalcogenides; tungsten diselenide; two dimensional electronics

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CONTACTS (FLUID MECHANICS); HOLE MOBILITY; OHMIC CONTACTS; SCHOTTKY BARRIER DIODES; SELENIUM COMPOUNDS; SEMICONDUCTOR DOPING; TRANSITION METALS;

AMBIPOLAR TRANSPORT; HIGH-ELECTRON-DENSITY; LAYERED SEMICONDUCTORS; POLYMER ELECTROLYTE; SCHOTTKY BARRIERS; TEMPERATURE DEPENDENCE; TRANSITION METAL DICHALCOGENIDES; TUNGSTEN DISELENIDE;

POLYELECTROLYTES;

EID: 84904743353     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn5021538     Document Type: Article

References (28)

1. 2 Transistors Nat. Nanotechnol. 2011, 6, 147-150
2. 2 Nat. Nanotechnol. 2013, 8, 497-501
3. Baugher, B. W. H.; Churchill, H. O. H.; Yang, Y.; Jarillo-Herrero, P. Optoelectronic Devices Based on Electrically Tunable p-n Diodes in a Monolayer Dichalcogenide Nat. Nanotechnol. 2014, 9, 262-267
4. Pospischil, A.; Furchi, M. M.; Mueller, T. Solar-Energy Conversion and Light Emission in an Atomic Monolayer p-n Diode Nat. Nanotechnol. 2014, 9, 257-261
5. 2 p-n Junctions Nat. Nanotechnol. 2014, 9, 268-272
6. 2 Nat. Mater. 2013, 12, 815-820
7. 2 ACS Nano 2011, 5, 9703-9709
8. 2 and Other Group-VI Dichalcogenides Phys. Rev. Lett. 2012, 108, 196802
9. 2 by Optical Helicity Nat. Nanotechnol. 2012, 7, 494-498
10. 2 Monolayers by Optical Pumping Nat. Nanotechnol. 2012, 7, 490
11. 2 Thin Flake Transistors Nano Lett. 2012, 12, 1136-1140
12. 2 P-FETs with Chemically Doped Contacts Nano Lett. 2012, 12, 3788-3792
13. 2 Field Effect Transistors Nano Lett. 2013, 13, 1983-1990
14. Fang, H.; Tosun, M.; Seol, G.; Chang, T. C.; Takei, K.; Guo, J.; Javey, A. Degenerate N-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium Nano Lett. 2013, 13, 1991-1995
15. 2 Field Effect Transistors. arXiv:1310.1816 [cond-mat.mes-hall] 2013.
16. 2 Nano Lett. 2013, 13, 4212-4216
17. 2 with Ambipolar Ionic Liquid-Gated Transistors Nano Lett. 2012, 12, 5218-5223
18. 2 Light-Emitting Transistors Nano Lett. 2014, 14, 2019-2025
19. 2 Field-Effect Transistors with Ionic-Liquid Gating ACS Nano 2013, 7, 4449-4458
20. Ye, J. T.; Zhang, Y. J.; Akashi, R.; Bahramy, M. S.; Arita, R.; Iwasa, Y. Superconducting Dome in a Gate-Tuned Band Insulator Science 2012, 338, 1193-1196
21. Ye, J.; Craciun, M. F.; Koshino, M.; Russo, S.; Inoue, S.; Yuan, H.; Shimotani, H.; Morpurgo, A. F.; Iwasa, Y. Accessing the Transport Properties of Graphene and Its Multilayers at High Carrier Density Proc. Natl. Acad. Sci. U.S.A. 2011, 108, 13002-13006
22. Yuan, H.; Shimotani, H.; Tsukazaki, A.; Ohtomo, A.; Kawasaki, M.; Iwasa, Y. High-Density Carrier Accumulation in ZnO Field-Effect Transistors Gated by Electric Double Layers of Ionic Liquids Adv. Funct. Mater. 2009, 19, 1046-1053
23. Lee, P. A.; Ramakrishnan, T. V. Disordered Electronic Systems Rev. Mod. Phys. 1985, 57, 287-337
24. Kumar, A.; Ahluwalia, P. K. Electronic Structure of Transition Metal Dichalcogenides Monolayers 1h-MS2 (M = Mo, W; X = S, Se, Te) from Ab-Initio Theory: New Direct Band Gap Semiconductors Eur. Phys. J. B 2012, 85, 1-7
25. Fivaz, R.; Mooser, E. Mobility of Charge Carriers in Semiconducting Layer Structures Phys. Rev. 1967, 163, 743-755
26. Benameur, M. M.; Radisavljevic, B.; Heron, J. S.; Sahoo, S.; Berger, H.; Kis, A. Visibility of Dichalcogenide Nanolayers Nanotechnology 2011, 22, 125706
27. Kruger, M.; Buitelaar, M. R.; Nussbaumer, T.; Schonenberger, C.; Forro, L. Electrochemical Carbon Nanotube Field-Effect Transistor Appl. Phys. Lett. 2001, 78, 1291-1293
28. Dankerl, M.; Tosun, M.; Stutzmann, M.; Garrido, J. A. Solid Polyelectrolyte-Gated Surface Conductive Diamond Field Effect Transistors Appl. Phys. Lett. 2012, 100, 023510