Field-effect transistors based on few-layered α-MoTe2

ACS Nano

Volumn 8, Issue 6, 2014, Pages 5911-5920

  Pradhan, Nihar R ^a   Rhodes, Daniel ^a   Feng, Simin ^b   Xin, Yan ^a   Memaran, Shahriar ^a   Moon, Byoung Hee ^a   Terrones, Humberto ^c   Terrones, Mauricio ^b   Balicas, Luis ^a  

^a FLORIDA STATE UNIVERSITY   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c Rensselaer Polytechnic Institute   (United States)

Author keywords

carrier mobility; field effect transistors; Raman scattering; transition metal dichalcogenides; two dimensional atomic layers

Indexed keywords

CARRIER MOBILITY; HALL MOBILITY; MOLYBDENUM COMPOUNDS; RAMAN SCATTERING; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC LAYER; CHEMICAL VAPOR TRANSPORT; DIELECTRIC ENGINEERING; ELECTRONIC PERFORMANCE; HALL MOBILITY MEASUREMENT; SPIN-ORBIT COUPLINGS; SUBTHRESHOLD SWING; TRANSITION METAL DICHALCOGENIDES;

FIELD EFFECT TRANSISTORS;

EID: 84903467571     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn501013c     Document Type: Article

References (47)

1. Chhowalla, M.; Shin, H. S.; Eda, G.; Li, L.-J.; Loh, K. P.; Zhang, H. The Chemistry of Two-Dimensional Layered Transition Metal Dichalcogenide Nanosheets Nat. Chem. 2013, 5, 263-275
2. 2: A New Direct-Gap Semiconductor Phys. Rev. Lett. 2010, 105, 136805
3. Bishop, N. C.; Padmanabhan, M.; Vakili, K.; Shkolnikov, Y. P.; De Poortere, E. P.; Shayegan, M. Valley Polarization and Susceptibility of Composite Fermions around a Filling Factor ν = 3/2 Phys. Rev. Lett. 2007, 98, 266404
4. Zhu, Z.; Collaudin, A.; Fauque, B.; Kang, W.; Behnia, K. Field-Induced Polarization of Dirac Valleys in Bismuth Nat. Phys. 2012, 8, 89-94
5. Rycerz, A.; Tworzydlo, J.; Beenakker, C. W. J. Valley Filter and Valley Valve in Graphene Nat. Phys. 2007, 3, 172-175
6. Gupta, J. A.; Knobel, R.; Samarth, N.; Awschalom, D. D. Ultrafast Manipulation of Electron Spin Coherence Science 2001, 292, 2458-2461 (Pubitemid 32601652)
7. 2 Trilayer Phys. Rev. Lett. 2013, 110, 066803
8. Xiao, D.; Yao, W.; Niu, Q. Valley-Contrasting Physics in Graphene: Magnetic Moment and Topological Transport Phys. Rev. Lett. 2007, 99, 236809
9. 2 J. Phys. Colloques 1981, 42, 320-322
10. 2 and Other Group-VI Dichalcogenides Phys. Rev. Lett. 2012, 108, 196802
11. 2 Nat. Mater. 2013, 12, 207-211
12. 2 Nat. Nanotechnol. 2013, 8, 634-638
13. 2 Crystals Nat. Commun. 2012, 3, 101
14. 2: Angle-Resolved Photoelectron Spectroscopy and ab Initio Calculations Phys. Rev. B 2001, 64, 235305
15. 2 Transistors Nat. Nanotechnol. 2011, 6, 147
16. 2 Layers Appl. Phys. Lett. 2012, 101, 223104
17. Podzorov, V.; Gershenson, M. E.; Kloc, Ch.; Zeis, R.; Bucher, E. High-Mobility Field-Effect Transistors Based on Transition Metal Dichalcogenides Appl. Phys. Lett. 2004, 84, 3301
18. 5 Room Temperature Modulation and Ambipolar Behavior Appl. Phys. Lett. 2012, 101, 013107
19. 2 Field-Effect Transistors with Enhanced Ambipolar Characteristics Appl. Phys. Lett. 2013, 103, 103501
20. 2 p-FETs with Chemically Doped Contacts Nano Lett. 2012, 12, 3788-3792
21. 2 Nat. Mater. 2013, 12, 815-820
22. 2 Nano Lett. 2013, 13, 4212
23. 2 Transistors with Scandium Contacts Nano Lett. 2013, 13, 100-105
24. 2 Acta Crystallogr. 196, 14, 691-692
25. 2 ACS Nano 2010, 4, 2695-2700
26. Terrones, H.; Del Corro-Garcia, E.; Feng, S.; Poumirol, J. M.; Rhodes, D.; Smirnov, D.; Pradhan, N. R.; Lin, Z.; Nguyen, M. A. T.; Elías, A. L. et al. New First Order Raman-Active Modes in Few Layered Transition Metal Dichalcogenides Sci. Rep. 2014, 4, 4215
27. 2 Opt. Express 2013, 21, 4908-4916
28. 2 ACS Nano 2014, 8, 3895-3903
29. Novoselov, K. S.; Jiang, D.; Schedin, F.; Booth, T. J.; Khotkevich, V. V.; Morozov, S. V.; Geim, A. K. Two-Dimensional Atomic Crystals Proc. Natl. Acad. Sci. U.S.A. 2005, 102, 10451
30. 2 Field-Effect Transistors and the Effect of Ambient on Their Performances Appl. Phys. Lett. 2012, 100, 123104
31. 2 Field-Effect Transistors with High Drive Current Appl. Phys. Lett. 2013, 103, 63104
32. 2 Nano-Membranes Nanotechnology 2013, 24, 025202
33. Ayari, A.; Cobas, E.; Ogundadegbe, O.; Fuhrer, M. S. Realization and Electrical Characterization of Ultrathin Crystals of Layered Transition-Metal Dichalcogenides J. Appl. Phys. 2007, 101, 014507
34. 2 Appl. Phys. Lett. 2013, 102, 123105
35. 2 Transistors with Scandium Contacts Nano Lett. 2013, 13, 100-105
36. Zhu, W.; Low, T.; Lee, Y.-H.; Wang, H.; Farmer, D. B.; Kong, J.; Xia, F.; Avouris, P. Electronic Transport and Device Prospects of Monolayer Molybdenum Disulphide Grown by Chemical Vapour Deposition Nat. Commun. 2014, 5, 3087
37. Liu, H.; Si, M.; Najmaei, S.; Neal, A.T.; Du, Y.; Ajayan, P. M.; Lou, J.; Ye, P. D. Statistical Study of Deep Submicron Dual-Gated Field-Effect Transistors on Monolayer Chemical Vapor Deposition Molybdenum Disulfide Films Nano Lett. 2013, 13, 2640-2646
38. Qiu, H.; Xu, T.; Wang, Z.; Ren, W.; Nan, H.; Ni, Z.; Chen, Q.; Yuan, S.; Miao, F.; Song, F. et al. Hopping Transport through Defect-Induced Localized States in Molybdenum Disulphide Nat. Commun. 2013, 4, 2642
39. 2 Field-Effect Transistors ACS Nano 2011, 5, 7707-7712
40. Mott, N. F. Electronic Processes in Non-Crystalline Materials; Clarendon Press: Oxford, UK, 1979.
41. 2 Transistors with Ferromagnetic Contacts Nano Lett. 2013, 13, 3106-3110
42. 2 Semicond. Sci. Technol. 2000, 15, 514-522
43. Yang, H.; Heo, J.; Park, S.; Song, H. J.; Seo, D. H.; Byun, K.-E.; Kim, P.; Yoo, I.; Chung, H.-J.; Kim, K. Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier Science 2012, 336, 1140
44. Terrones, H.; Lopez-Urias, F.; Terrones, M. Novel Hetero-Layered Materials with Tunable Direct Band Gaps by Sandwiching Different Metal Disulfides and Diselenides Sci. Rep. 2013, 3, 1549
45. Lee, C.-H.; Lee, G.-H.; van der Zande, A. M.; Chen; Li, Y.; Han, M.; Cui, X.; Arefe, G.; Nuckolls, C.; Heinz, T. F.; Guo, J.; Hone, J.; Kim, P. Atomically Thin P-N Junctions with Van Der Waals Heterointerfaces. 2014, arXiv: physics/1403.3062. arXiv.org e-Print archive http://arxiv.org/abs/1403.3062 (accessed Mar 21, 2014).
46. Pospischil, A.; Furchi, M. M.; Mueller, T. Solar Energy Conversion and Light Emission in An Atomic Monolayer P-N Diode Nat. Nanotechnol. 2014, 9, 257-261
47. Baugher, B. W. H.; Churchill, H. O. H.; Yang, Y.; Jarillo-Herrero, P. Optoelectronics with Electrically Tunable PN Diodes in a Monolayer Dichalcogenide Nat. Nanotechnol. 2014, 9, 262-267