Exfoliated multilayer MoTe2 field-effect transistors

Applied Physics Letters

Volumn 105, Issue 19, 2014, Pages

  Fathipour, S ^a   Ma, N ^a   Hwang, W S ^b   Protasenko, V ^a   Vishwanath, S ^a   Xing, H G ^a   Xu, H ^a   Jena, D ^a   Appenzeller, J ^c   Seabaugh, A ^a  

^a University of Notre Dame   (United States)

^b Hankuk Aviation University   (South Korea)

^c PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; MULTILAYERS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING FILMS; SILICA; TELLURIUM COMPOUNDS; TEMPERATURE DISTRIBUTION;

AMBIPOLAR CHARACTERISTICS; CURRENT VOLTAGE MEASUREMENT; FIELD EFFECT TRANSISTOR (FETS); LONG CHANNEL TRANSISTORS; ON/OFF CURRENT RATIO; SCHOTTKY BARRIER CONTACTS; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT;

FIELD EFFECT TRANSISTORS;

EID: 84922467477     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4901527     Document Type: Article

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