Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor

Nature Nanotechnology

Volumn 3, Issue 4, 2008, Pages 210-215

  Das, A ^a   Pisana, S ^b   Chakraborty, B ^a   Piscanec, S ^b   Saha, S K ^a   Waghmare, U V ^c   Novoselov, K S ^d   Krishnamurthy, H R ^a   Geim, A K ^d   Ferrari, A C ^b   Sood, A K ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c JAWAHARLAL NEHRU CENTRE FOR ADVANCED SCIENTIFIC RESEARCH   (India)

^d UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

GRAPHENE; POLYELECTROLYTES; SILICA; SOLID ELECTROLYTES; YARN;

DEBYE LAYER; DOPING LEVELS; GATE CAPACITANCE; HIGH DOPING LEVEL; POLYMER TRANSISTORS; SENSITIVE PARAMETER; SOLID POLYMER ELECTROLYTES; STRONG DEPENDENCES;

GRAPHENE TRANSISTORS;

POLYMER;

ARTICLE; DEVICE; DISPERSION; ELECTRIC CAPACITANCE; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTROCHEMISTRY; ELECTRODE; ELECTRON; ENERGY; GEOMETRY; MATHEMATICAL COMPUTING; MOLECULAR ELECTRONICS; PHONON; PRIORITY JOURNAL; QUANTUM CHEMISTRY; RAMAN SPECTROMETRY; SEMICONDUCTOR;

EID: 41849142983     PISSN: 17483387     EISSN: 17483395     Source Type: Journal    
DOI: 10.1038/nnano.2008.67     Document Type: Article

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