Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors

Applied Physics Letters

Volumn 103, Issue 5, 2013, Pages

  Gong, Cheng ^a   Zhang, Hengji ^b   Wang, Weihua ^a   Colombo, Luigi ^c   Wallace, Robert M ^a,b   Cho, Kyeongjae ^a,b  

^a The University of Texas at Dallas   (United States)

^b UNIVERSITY OF TEXAS AT DALLAS   (United States)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; LOW-POWER LOGIC; TRANSITION METAL DICHALCOGENIDES; TUNNEL FIELD EFFECT TRANSISTOR; TUNNEL FIELDEFFECT TRANSISTOR (TFETS); TUNNELING EFFICIENCY; TWO-DIMENSIONAL MATERIALS; VERTICAL STACKING;

ALIGNMENT; ELECTRON TUNNELING; LOGIC DEVICES; MONOLAYERS; SEMICONDUCTOR JUNCTIONS; TRANSITION METALS; TWO DIMENSIONAL;

FIELD EFFECT TRANSISTORS;

EID: 84882299765     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4817409     Document Type: Article

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