Surface transport and band gap structure of exfoliated 2H-MoTe2 crystals

2D Materials

Volumn 1, Issue 2, 2014, Pages

  Lezama, Ignacio Gutiérrez ^a   Ubaldini, Alberto ^b   Longobardi, Maria ^b   Giannini, Enrico ^b   Renner, Christoph ^b   Kuzmenko, Alexey B ^b   Morpurgo, Alberto F ^a  

^a Universitei de Geneve   (Switzerland)

^b Institute of Physics   (Switzerland)

Author keywords

Ambipolar Transistor; Band Gap; Ionicliquid Gating; Optical Spectroscopy; Scanning Tunneling Spectroscopy; Surface Transport; Transition metal dichalcogenides

Indexed keywords

CRYSTAL STRUCTURE; ENERGY GAP; HOLE MOBILITY; IONIC LIQUIDS; LIGHT TRANSMISSION; OPTICAL PROPERTIES; SCANNING TUNNELING MICROSCOPY; SELENIUM COMPOUNDS; SEMICONDUCTING TELLURIUM; SPECTROSCOPY; SULFUR COMPOUNDS; TRANSITION METALS;

AMBIPOLAR TRANSISTORS; OPTICAL SPECTROSCOPY; SCANNING TUNNELING SPECTROSCOPY; SURFACE TRANSPORT; TRANSITION METAL DICHALCOGENIDES;

SEMICONDUCTING TELLURIUM COMPOUNDS;

EID: 84925255446     PISSN: None     EISSN: 20531583     Source Type: Journal    
DOI: 10.1088/2053-1583/1/2/021002     Document Type: Article

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