Improved carrier mobility in few-layer MoS2 field-effect transistors with ionic-liquid gating

ACS Nano

Volumn 7, Issue 5, 2013, Pages 4449-4458

  Perera, Meeghage Madusanka ^a   Lin, Ming Wei ^a   Chuang, Hsun Jen ^a   Chamlagain, Bhim Prasad ^a   Wang, Chongyu ^a   Tan, Xuebin ^b   Cheng, Mark Ming Cheng ^b   Tománek, David ^c   Zhou, Zhixian ^a  

^a WAYNE STATE UNIVERSITY   (United States)

^b Wayne State University   (United States)

^c MICHIGAN STATE UNIVERSITY   (United States)

Author keywords

electric double layer; few layer; field effect transistor; MoS2; Schottky barrier

Indexed keywords

ELECTRIC DOUBLE LAYER; FEW-LAYER; FIELD EFFECT TRANSISTOR (FETS); FOUR-TERMINAL MEASUREMENTS; MOS2; PERFORMANCE ENHANCEMENTS; SCHOTTKY BARRIERS; SOURCE AND DRAIN ELECTRODES;

ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; IONIC LIQUIDS; SCHOTTKY BARRIER DIODES;

MOLYBDENUM COMPOUNDS;

EID: 84878321486     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn401053g     Document Type: Article

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