HfO2 on MoS2 by atomic layer deposition: Adsorption mechanisms and thickness scalability

ACS Nano

Volumn 7, Issue 11, 2013, Pages 10354-10361

  McDonnell, Stephen ^a   Brennan, Barry ^a   Azcatl, Angelica ^a   Lu, Ning ^a   Dong, Hong ^a   Buie, Creighton ^a   Kim, Jiyoung ^a   Hinkle, Christopher L ^a   Kim, Moon J ^a   Wallace, Robert M ^a  

^a The University of Texas at Dallas   (United States)

Author keywords

ALD; band offsets; HfO2; high ; MoS2; nanoelectronics; TMD

Indexed keywords

ALD; BAND OFFSETS; HFO2; MOS2; TMD;

DEPOSITION; HAFNIUM OXIDES; MOLYBDENUM COMPOUNDS; NANOELECTRONICS; NUCLEATION;

ATOMIC LAYER DEPOSITION;

EID: 84888874588     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn404775u     Document Type: Article

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