Band gap engineering and layer-by-layer mapping of selenium-doped molybdenum disulfide

Nano Letters

Volumn 14, Issue 2, 2014, Pages 442-449

  Gong, Yongji ^a   Liu, Zheng ^b,c   Lupini, Andrew R ^d   Shi, Gang ^b   Lin, Junhao ^d,e   Najmaei, Sina ^b   Lin, Zhong ^f   Elías, Ana Laura ^f   Berkdemir, Ayse ^f   You, Ge ^b   Terrones, Humberto ^f   Terrones, Mauricio ^f,g   Vajtai, Robert ^b   Pantelides, Sokrates T ^d,e   Pennycook, Stephen J ^d   Lou, Jun ^b   Zhou, Wu ^d   Ajayan, Pulickel M ^a,b  

^a RICE UNIVERSITY   (United States)

^b Rice University   (United States)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^d OAK RIDGE NATIONAL LABORATORY   (United States)

^e VANDERBILT UNIVERSITY   (United States)

^f PENNSYLVANIA STATE UNIVERSITY   (United States)

^g SHINSHU UNIVERSITY   (Japan)

Author keywords

ADF imaging; band gap engineering; dopant distribution; Monolayer molybdenum disulfide (MoS2); Se doping; ternary alloy

Indexed keywords

EID: 84894162561     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl4032296     Document Type: Article

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