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Volumn 26, Issue 20, 2014, Pages 3263-3269

Ambipolar MoTe2 transistors and their applications in logic circuits

(12) Lin, Yen Fu a,b Xu, Yong a Wang, Sheng Tsung c Li, Song Lin a Yamamoto, Mahito a Aparecido Ferreira, Alex a Li, Wenwu a Sun, Huabin a Nakaharai, Shu a Jian, Wen Bin c Ueno, Keiji d Tsukagoshi, Kazuhito a

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

b NATIONAL CHUNG HSING UNIVERSITY (Taiwan)

c NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

d SAITAMA UNIVERSITY (Japan)

Author keywords

ambipolar transistors; electronics; Schottky barriers; transistors

Indexed keywords

DRAIN CURRENT; ELECTRONIC EQUIPMENT; SCHOTTKY BARRIER DIODES;

AMBIPOLAR CHARGE TRANSPORTS; AMBIPOLAR TRANSISTORS; COMPLEMENTARY INVERTERS; ELECTRICAL CHARACTERISTIC; MOLYBDENUM DITELLURIDE; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; TEMPERATURE DEPENDENCE;

TRANSISTORS;

EID: 84901493242 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201305845 Document Type: Article

Times cited : (423)

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