Ambipolar MoS 2 thin flake transistors

Nano Letters

Volumn 12, Issue 3, 2012, Pages 1136-1140

  Zhang, Yijin ^a   Ye, Jianting ^a   Matsuhashi, Yusuke ^a   Iwasa, Yoshihiro ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b RIKEN   (Japan)

Author keywords

electric double layer; FET; Transition metal chalcogenide

Indexed keywords

AMBIPOLAR; BULK PROPERTIES; DEVICE APPLICATION; ELECTRIC DOUBLE LAYER; ELECTRON TRANSPORT; FET; HALL EFFECT MEASUREMENT; HIGH-DENSITY; LAYERED MATERIAL; METALLIC TRANSPORT; N-TYPE SEMICONDUCTORS; ON/OFF RATIO; SOLID DIELECTRIC; TRANSISTOR OPERATION; TRANSITION METAL CHALCOGENIDES; TRANSITION METAL DICHALCOGENIDES;

ELECTRIC FIELD EFFECTS; ELECTROCHEMISTRY; ELECTRON MOBILITY; GRAPHENE; HOLE MOBILITY; IONIC LIQUIDS; MESFET DEVICES; PHASE CHANGE MEMORY; TRANSISTORS; TRANSITION METALS;

MOLYBDENUM COMPOUNDS;

MOLYBDENUM; NANOMATERIAL; SULFIDE;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; ELECTRODE; EQUIPMENT; EQUIPMENT DESIGN; METHODOLOGY; PARTICLE SIZE; SEMICONDUCTOR; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTRODES; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MOLYBDENUM; NANOSTRUCTURES; PARTICLE SIZE; SULFIDES; TRANSISTORS, ELECTRONIC;

EID: 84858183056     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl2021575     Document Type: Article

References (22)

1. Friend, R. H.; Yoffe, A. D. Adv. Phys. 1987, 36, 1
2. Sipos, B.; Kusmartseva, A. F.; Akrap, A.; Berger, H.; Forro, L.; Tutis, E. Nat. Mater. 2008, 7, 960
3. Wilson, J. A.; Disalvo, F. J.; Mahajan, S. Adv. Phys. 1975, 24, 117
4. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Science 2004, 306, 666
5. Novoselov, K. S.; Jiang, D.; Schedin, F.; Booth, T. J.; Khotkevich, V. V.; Morozov, S. V.; Geim, A. K. Proc. Natl. Acad. Sci. U.S.A. 2005, 102, 10451
6. Ayari, A.; Cobas, E.; Ogundadegbe, O.; Fuhrer, M. S. J. Appl. Phys. 2007, 101, 014507
7. Radisavljevic, B.; Radenovic, A.; Brivio, J.; Giacometti, V.; Kis, A. Nat. Nanotechnol. 2011, 6, 147
8. Staley, N. E.; Wu, J.; Eklund, P.; Liu, Y.; Li, L. J.; Xu, Z. Phys. Rev. B 2009, 80, 184505
9. Ye, J. T.; Inoue, S.; Kobayashi, K.; Kasahara, Y.; Yuan, H. T.; Shimotani, H.; Iwasa, Y. Nat. Mater. 2010, 9, 125
10. Podzorov, V.; Gershenson, M. E.; Kloc, C.; Zeis, R.; Bucher, E. Appl. Phys. Lett. 2004, 84, 3301
11. Li, X.; Wang, X.; Zhang, L.; Lee, S.; Dai, H. Science 2008, 319, 1229
12. Mak, K. F.; Lee, C.; Hone, J.; Shan, J.; Heinz, T. F. Phys. Rev. Lett. 2010, 105, 136805
13. Splendiani, A.; Sun, L.; Zhang, Y. B.; Li, T. S.; Kim, J.; Chim, C. Y.; Galli, G.; Wang, F. Nano Lett. 2010, 10, 1271
14. Woollam, J. A.; Somoano, R. B. Phys. Rev. B 1976, 13, 3843
15. Woollam, J. A.; Somoano, R. B. Mater. Sci. Eng. 1977, 31, 289
16. Takahashi, T.; Takenobu, T.; Takeya, J.; Iwasa, Y. Adv. Funct. Mater. 2007, 17, 1623-1628
17. Shimotani, H.; Asanuma, H.; Tsukazaki, A.; Ohtomo, A.; Kawasaki, M.; Iwasa, Y. Appl. Phys. Lett. 2007, 91, 082106
18. Ueno, K.; Nakamura, S.; Shimotani, H.; Ohtomo, A.; Kimura, N.; Nojima, T.; Aoki, H.; Iwasa, Y.; Kawasaki, M. Nat. Mater. 2008, 7, 855
19. Ueno, K.; Nakamura, S.; Shimotani, H.; Yuan, H. T.; Kimura, N.; Nojima, T.; Aoki, H.; Iwasa, Y.; Kawasaki, M. Nat. Nanotechnol. 2011, 6, 408
20. Yuan, H. T.; Toh, M.; Morimoto, K.; Tan, W.; Wei, F.; Shimotani, H.; Kloc, C.; Iwasa, Y. Appl. Phys. Lett. 2011, 98, 012102
21. Yuan, H. T.; Shimotani, H.; Tsukazaki, A.; Ohtomo, A.; Kawasaki, M.; Iwasa, Y. Adv. Funct. Mater. 2009, 19, 1046
22. Ye, J. T.; Craciun, M. F.; Koshino, M.; Russo, S.; Inoue, S.; Yuan, H. T.; Shimotani, H.; Morpurgo, A. F.; Iwasa, Y. Proc. Natl. Acad. Sci. U.S.A. 2011, 108, 13002