WSe2 field effect transistors with enhanced ambipolar characteristics

Applied Physics Letters

Volumn 103, Issue 10, 2013, Pages

  Das, Saptarshi ^a,b   Appenzeller, Joerg ^a  

^a PURDUE UNIVERSITY   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR CHARACTERISTICS; AMBIPOLAR DEVICES; CHANNEL MATERIALS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CONTACT ELECTRODES; ELECTRON TRANSPORT; PALLADIUM ELECTRODES; SCHOTTKY BARRIER HEIGHTS;

ELECTRODES; ELECTRON INJECTION;

FIELD EFFECT TRANSISTORS;

EID: 84884273239     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4820408     Document Type: Article

References (30)

1. S. M. Sze, Semiconductor Devices, 2nd ed. (John Wiley Sons, Inc., Hoboken, New Jersey, 2003).
2. Z. Chen, J. Appenzeller, J. Knoch, Y. Lin, and P. Avouris, Nano Lett. 5, 1497-1502 (2005). 10.1021/nl0508624
3. S. G. Louie and L. M. Cohen, Phys. Rev. B 13, 2461-2469 (1976). 10.1103/PhysRevB.13.2461
4. A. M. Cowley and S. M. Sze, J. Appl. Phys. 36, 3212 (1965). 10.1063/1.1702952
5. F. J. Himpsel, G. Hollinger, and R. A. Pollak, Phys. Rev. B 28, 7014-7018 (1983). 10.1103/PhysRevB.28.7014
6. T. Nishimura, K. Kita, and A. Toriumi, Appl. Phys. Lett. 91, 123123 (2007). 10.1063/1.2789701
7. N. Newman, W. E. Spicer, and T. Kendelewicz, J. Vac. Sci. Technol. B 4, 931 (1986). 10.1116/1.583494
8. F. Leonard and J. Tersoff, Phys. Rev. Lett. 84, 4693-4696 (2000). 10.1103/PhysRevLett.84.4693
9. L. J. Brillson, C. F. Brucker, and A. D. Katnani, J. Vac. Sci. Technol. 21, 564 (1982). 10.1116/1.571764
10. W. Monch, J. Vac. Sci. Technol. B 4, 1085 (1986). 10.1116/1.583548
11. B. Radisavljevic, A. Radenovic, J. Brivio, J. Giacometti, and A. Kis, Nat. Nanotechnol. 6, 147-150 (2011). 10.1038/nnano.2010.279
12. H. Wang, L. Yu, Y. H. Lee, Y. Shi, A. Hsu, M. L. Chin, L. J. Li, M. Dubey, J. Kong, and T. Palacios, Nano Lett. 12, 4674-4680 (2012). 10.1021/nl302015v
13. S. Das and J. Appenzeller, Nano Lett. 13, 100-105 (2013). 10.1021/nl303583v
14. S. Kim, A. Konar, H. S. Wang, J. H. Lee, J. Lee, J. Yang, C. Jung, H. Kim, J. Yoo, J. Y. Choi, W. Y. Jin, S. W. Lee, D. Jena, W. Choi, and K. Kim, Nat. Commun. 3, 1011 (2012). 10.1038/ncomms2018
15. S. Das, H. Y. Chen, A. V. Penumatcha, and J. Appenzeller, Phys. Status Solidi (RRL) 7, 268-273 (2013). 10.1002/pssr.201307015
16. J. Pu, Y. Yomogida, K. K. Liu, L. J. Lee, Y. Iwasha, and T. Takenebu, Nano Lett. 12, 4013-4017 (2012). 10.1021/nl301335q
17. H. Fang, S. Chuang, T. C. Chang, K. Takei, T. Takahashi, and A. Javey, Nano Lett. 12, 3788-3792 (2012). 10.1021/nl301702r
18. W. Liu, J. Kang, D. Sarkar, Y. Khatami, and D. Jena, Nano Lett. 13, 1983-1990 (2013). 10.1021/nl304777e
19. S. W. Hwang, M. Remskar, and R. Yan, Appl. Phys. Lett. 101, 013107 (2012). 10.1063/1.4732522
20. S. Das and J. Appenzeller, in Device Research Conference (2013).
21. T. Georgiou, R. Jalil, and B. D. Belle, Nat. Nanotechnol. 8, 100-103 (2013). 10.1038/nnano.2012.224
22. S. Das and J. Appenzeller, Nano Lett. 13, 3396-3402 (2013). 10.1021/nl401831u
23. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, and P. Avouris, Phys. Rev. Lett. 89, 106801 (2002). 10.1103/PhysRevLett.89.106801
24. S. Heinze, J. Tersoff, and P. Avouris, Appl. Phys. Lett. 83, 5038 (2003). 10.1063/1.1632531
25. R. Coehoorn, C. Haas, J. Dijkstra, and C. J. F. Flipse, Phys. Rev. B 35, 6195-6202 (1987). 10.1103/PhysRevB.35.6195
26. M. S. Centre and F. Wilson, Phys. Rev. B 35, 6203-6206 (1987). 10.1103/PhysRevB.35.6203
27. J. Appenzeller, J. Knoch, R. Martel, V. Derycke, S. Wind, and P. Avouris, Phys. Rev. Lett. 89, 126801 (2002). 10.1103/PhysRevLett.89.126801
28. J. Knoch and J. Appenzeller, Appl. Phys. Lett. 81, 3082 (2002). 10.1063/1.1513657
29. W. S. Yun, S. W. Han, S. C. Hong, I. G. Kim, and J. D. Lee, Phys. Rev. B 85, 033305 (2012). 10.1103/PhysRevB.85.033305
30. J. Guo, S. Datta, and M. Lundstrom, IEEE Electron Device Lett. 51, 172-177 (2004). 10.1109/TED.2003.821883