High-gain inverters based on WSe2 complementary field-effect transistors

ACS Nano

Volumn 8, Issue 5, 2014, Pages 4948-4953

  Tosun, Mahmut ^a,b,c   Chuang, Steven ^a,b,c   Fang, Hui ^a,b,c   Sachid, Angada B ^a   Hettick, Mark ^a,b,c   Lin, Yongjing ^a,b,c   Zeng, Yuping ^a,b,c   Javey, Ali ^a,b,c  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

CMOS electronics; complementary logic; digital circuits; monolayer semiconductors; transition metal dichalcogenides

Indexed keywords

DIGITAL CIRCUITS; ELECTRON INJECTION; LOGIC DEVICES; SEMICONDUCTOR DOPING;

COMPLEMENTARY LOGIC; ELECTRONIC APPLICATION; FIELD EFFECT TRANSISTOR (FETS); HIGH-WORK-FUNCTION METAL; HOLE INJECTION; LAYERED CHALCOGENIDES; ON/OFF CURRENT RATIO; TRANSITION METAL DICHALCOGENIDES;

FIELD EFFECT TRANSISTORS;

EID: 84901666436     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn5009929     Document Type: Article

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