Highly tunable charge transport in layer-by-layer assembled graphene transistors

ACS Nano

Volumn 6, Issue 3, 2012, Pages 2432-2440

  Hwang, Hyunmin ^a   Joo, Piljae ^b   Kang, Moon Sung ^a   Ahn, Gukmoon ^b   Han, Joong Tark ^c   Kim, Byeong Su ^b   Cho, Jeong Ho ^d  

^a Soongsil University   (South Korea)

^b Ulsan National Institute of Science and Technology   (South Korea)

^c Korea Electrotechnology Research Institute (KERI)   (South Korea)

^d Sungkyunkwan University   (South Korea)

Author keywords

ambipolar to unipolar transition; grapheme; layer by layer assembly; nitrogen doping; transistor

Indexed keywords

AMBIPOLAR; BI-LAYER; CARBON ATOMS; ELECTRICAL BEHAVIORS; ELECTRONIC DEVICE; GRAPHEME; GRAPHENE MULTILAYERS; GRAPHENE OXIDES; GRAPHENE TRANSISTORS; LAYER-BY-LAYER ASSEMBLIES; LAYER-BY-LAYER ASSEMBLY; LAYER-BY-LAYERS; NITROGEN ATOM; NITROGEN DOPING; P-TYPE; POSITIVELY CHARGED; REDUCED GRAPHENE OXIDES; SYSTEMATIC METHOD; TEMPERATURE DEPENDENT; THERMAL REDUCTION; TIME OF FLIGHT SECONDARY ION MASS SPECTROMETRY; UNIPOLAR TRANSITION; VERSATILE METHODS;

FIELD EFFECT TRANSISTORS; FUNCTIONAL GROUPS; MULTILAYER FILMS; MULTILAYERS; NITROGEN; OXIDE FILMS; PHOTOELECTRON SPECTROSCOPY; RAMAN SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; TRANSISTORS;

GRAPHENE;

EID: 84859111661     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn2047197     Document Type: Article

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