Why is nonvolatile ferroelectric memory field-effect transistor still elusive?

IEEE Electron Device Letters

Volumn 23, Issue 7, 2002, Pages 386-388

  Ma, T P ^a,b   Han, Jin Ping ^a,b  

^a IEEE   (United States)

^b Yale University   (United States)

Author keywords

Depolarization field; Ferroelectrics; FET; Leakage current; Nonvolatile memory; Retention

Indexed keywords

DEPOLARIZATION FIELD; FERROELECTRIC MEMORY FIELD EFFECT TRANSISTOR; GATE STACK; MEMORY RETENTION;

CAPACITANCE MEASUREMENT; DYNAMIC RANDOM ACCESS STORAGE; ELECTRON TRAPS; FERROELECTRIC DEVICES; GATES (TRANSISTOR); LEAKAGE CURRENTS; POLARIZATION; SEMICONDUCTING SILICON; SEMICONDUCTOR STORAGE; THRESHOLD VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 0036646284     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.1015207     Document Type: Article

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