Anodized aluminum oxide thin films for room-temperature-processed, flexible, low-voltage organic non-volatile memory elements with excellent charge retention

Advanced Materials

Volumn 23, Issue 42, 2011, Pages 4892-4896

  Kaltenbrunner, Martin ^a   Stadler, Philipp ^a   Schwödiauer, Reinhard ^a   Hassel, Achim Walter ^a   Sariciftci, Niyazi Serdar ^a   Bauer, Siegfried ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ACCESS TIME; ANODIZED ALUMINUM OXIDE; BRAILLE DISPLAY; CHARGE RETENTION; DIELECTRIC BREAKDOWN STRENGTH; FERROELECTRIC POLYMERS; FLOATING GATES; GATE ELECTRODES; HIGH-VOLTAGE OPERATION; IMAGE SCANNER; INTERFACE CHARGE; LARGE AREA SENSORS; LARGE-AREA ELECTRONICS; LOW-LEAKAGE CURRENT; LOW-VOLTAGE; MATRIX ARRAYS; NON-VOLATILE; NON-VOLATILE MEMORIES; OPERATING VOLTAGE; ORGANIC ELECTRONICS; ORGANIC MEMORIES; POTENTIAL APPLICATIONS; WIRELESS TAGS; ANODIZATIONS; CHARGE RETENTION TIME; HIGH-K DIELECTRIC; HIGH-K DIELECTRIC FILMS; MEMORY TRANSISTORS; NON-VOLATILE MEMORY; NON-VOLATILE MEMORY TRANSISTORS;

ELECTRETS; ELECTRIC BREAKDOWN; FERROELECTRICITY; FLEXIBLE DISPLAYS; FLEXIBLE ELECTRONICS; GATE DIELECTRICS; LEAKAGE CURRENTS; ORGANIC FIELD EFFECT TRANSISTORS; OXIDE FILMS; SMART CARDS; TRANSISTORS; ALUMINUM; DATA STORAGE EQUIPMENT; DIELECTRIC FILMS; DIELECTRIC MATERIALS; DIGITAL STORAGE; NONVOLATILE STORAGE; OXIDES;

FLASH MEMORY; FIELD EFFECT TRANSISTORS;

ALUMINUM OXIDE; NAPHTHACENE DERIVATIVE; OCTYLTRICHLOROSILANE; PENTACENE; POLYETHYLENE; POLYIMIDE RESIN; RESIN; SILANE DERIVATIVE;

ARTICLE; CHEMISTRY; SEMICONDUCTOR; TEMPERATURE;

ALUMINUM OXIDE; NAPHTHACENES; POLYETHYLENE; RESINS, SYNTHETIC; SILANES; TEMPERATURE; TRANSISTORS, ELECTRONIC;

EID: 82955188705     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201103189     Document Type: Article

References (50)

1. H. Klauk, Chem. Soc. Rev. 2010, 39, 2643
2. D. Braga, G. Horowitz, Adv. Mater. 2009, 21, 1473
3. S. A. DiBenedetto, A. Facchetti, M. A. Ratner, T. J. Marks, Adv. Mater. 2009, 21, 1407
4. H. Sirringhaus, Adv. Mater. 2005, 17, 2411.
5. H. E. A. Huitema, G. H. Gelinck, J. B. P. H. van der Putten, K. E. Kujik, K. M. Hart, E. Cantatore, D. M. deLeeuw, Adv. Mater. 2002, 14, 1201.
6. Y. Kato, T. Sekitani, H. Takamiya, M. Doi, K. Asaka, T. Sakurai, T. Someya, IEEE Trans. Electron. Devices 2007, 54, 202.
7. T. Someya, Y. Kato, Y. S. I. Noguchi, T. Sekitani, H. Kawaguchi, T. Sakurai, IEEE Trans. Electr. Devices 2005, 52, 2502.
8. T. Someya, T. Sekitani, S. Iba, Y. Kato, H. Kawaguchi, T. Sakurai, Proc. Natl. Acad. Sci. USA 2004, 101, 9966
9. T. Someya, Y. Kato, T. Sekitani, S. Iba, Y. Noguchi, Y. Murase, H. Kawaguchi, T. Sakurai, Proc. Natl. Acad. Sci. USA 2005, 102, 12321
10. I. Graz, M. Krause, S. Bauer-Gogonea, S. Bauer, S. P. Lacour, B. Ploss, M. Zirkl, B. Stadlober, S. Wagner, J. Appl. Phys. 2009, 106, 034503
11. S. C. B. Mannsfeld, B. C. K. Tee, R. M. Stoltenberg, C. V. H. H. Chen, S. Barman, B. V. O. Muir, A. N. Sokolov, C. Reese, Z. Bao, Nat. Mater. 2010, 9, 859
12. K. Takei, T. Takahashi, J. C. Ho, H. Ko, A. G. Gillies, P. W. Leu, R. S. Fearing, A. Javey, Nat. Mater. 2010, 9, 821.
13. J. C. Scott, L. D. Bozano, Adv. Mater. 2007, 19, 1452
14. Q. D. Ling, D. J. Liaw, C. X. Zhu, D. S. H. Chan, E. T. Kang, K. G. Neoh, Progr. Polym. Sci. 2008, 33, 917
15. W. L. Leong, N. Mathews, B. Tan, S. Vaidyanathan, F. Dötz, S. Mhaisalkar, J. Mater. Chem. 2011, 21, 5203
16. M. Mushrush, A. Facchetti, M. Lefenfeld, H. E. Katz, T. J. Marks, J. Am. Chem. Soc. 2003, 125, 9414
17. T. B. Singh, N. Marjanovic, G. J. Matt, N. S. Sariciftci, R. Schwödiauer, S. Bauer, Appl. Phys. Lett. 2004, 85, 5409
18. K. J. Baeg, Y. Y. Noh, J. Ghim, B. Lim, D. Y. Kim, Adv. Funct. Mater. 2008, 18, 3678.
19. R. C. G. Naber, C. Tanase, P. W. M. Blom, C. H. Gelinck, A. W. Marsman, F. J. Touwslager, S. Setayesh, D. M. de Leeuw, Nat. Mater. 2005, 4, 423
20. R. C. G. Naber, K. Asadi, P. W. M. Blom, D. M. de Leeuw, B. de Boer, Adv. Mater. 2010, 22, 933
21. K. Asadi, D. M. de Leeuw, B. de Boer, P. W. M. Blom, Nat. Mater. 2008, 7, 547
22. T. Nakajima, M. Nakamura, T. Furukawa, S. Okamura, Jpn. J. Appl. Phys. 2010, 45, 09MC12
23. R. Kalbitz, P. Frübing, R. Gerhard, D. M. Taylor, Appl. Phys. Lett. 2011, 98, 033303.
24. M. Colle, M. Buchel, D. M. de Leeuw, Org. Electron. 2006, 7, 305
25. S. Song, B. Cho, T. W. Kim, Y. Ji, M. Jo, G. Wang, M. Choe, Y. H. Kanhng, H. Hwang, T. Lee, Adv. Mater. 2010, 22, 5048.
26. K. S. J. Kim, J. S. Lee, Nano Lett. 2010, 8, 2884
27. M. Burkhardt, A. Jedda, M. Novak, A. Ebel, K. Voitchovsky, F. Stellacci, A. Hirsch, M. Halik, Adv. Mater. 2010, 22, 2525
28. K. J. Baeg, Y. Y. Noh, H. Sirringhaus, D. Y. Kim, Adv. Funct. Mater. 2010, 20, 224
29. T. Sekitani, T. Yokota, U. Zschieschang, H. Klauk, S. Bauer, K. Takeuchi, M. Takamiya, T. Sakurai, T. Someya, Science 2009, 326, 1516.
30. L.- L. Chua, P. K. H. Ho, H. Sirringhaus, R. H. Friend, Appl. Phys. Lett. 2004, 84, 3400
31. A. Facchetti, M.-H. Yoon, T.J. Marks, Adv. Mater. 2005, 17, 1705.
32. L. A. Majewski, R. Schroeder, M. Grell, Adv. Mater. 2005, 17, 192
33. S. Goettling, B Diehm, N. Fruehauf, J. Displ. Technol. 2008, 4, 300
34. Y. T. Jeong, A. Dodabalapur, Appl. Phys. Lett. 2007, 91, 193509
35. W. Lin, R. Müller, K. Myny, S. Steudel, J. Genoe, P. Heremans, Org. Electron. 2011, 12, 955.
36. M. M. Lohrengel, Mater. Sci. Eng. R 1993, 11, 243.
37. D. Diesing, A. W. Hassel, M. M. Lohrengel, Thin Solid Films 1999, 342, 282.
38. H. Klauk, U. Zschieschang, J. Pflaum, M. Halik, Nat. Mater. 2007, 445, 745
39. P. Stadler, A. M. Track, M. Ullah, H. Sitter, G. J. Matt, G. Koller, T. B. Singh, H. Neugebauer, N. S. Sariciftci, M. G. Ramsey, Org. Electron. 2010, 11, 207.
40. A. W. Hassel, D. Diesing, J. Electrochem. Soc. 2007, 154, 558.
41. E. von Schweidler, Ann. Phys. 1907, 24, 711.
42. R. H. Fowler, L. W. Nordheim, Proc. R. Soc. London, Ser. A 1928, 119, 173
43. R. G. Forbes, J. Vac. Sci. Technol. B 1999, 17, 526
44. T. W. Hickmott, J. Appl. Phys 2000, 87, 7903.
45. T. V. Perevalov, A. V. Shaposhnikov, V. A. Gritsenko, Microelectron. Eng. 2009, 86, 1915.
46. A. M. Goodman, J. Appl. Phys 1970, 41, 2176
47. W. H. Rippard, A. C. Perrella, F. J. Albert, R. A. Buhrman, Phys. Rev. Lett. 2002, 88, 046805-046811
48. E. Cimpoiasu, S. K. Tolpygo, X. Liu, N. Simonian, J. E. Lukens, K. K. Likharev, R. F. Klie, Y. Zhu, J. Appl. Phys. 2004, 96, 1088.
49. D. Boudinet, G. L. Blevennec, C. Serbutoviez, J.-M. Verilhac, H. Yan, G. Horowitz, J. Appl. Phys. 2009, 105, 084510.
50. A. Andreev, T. Haber, D.-M. Smilgies, R. Resel, H. Sitter, N. S. Sariciftci, L. Valek, J. Cryst. Growth 2005, 275, 2037.