SCOPUS 정보 검색 플랫폼

Volumn 101, Issue 2, 2007, Pages

A thickness modulation effect of HfO2 interfacial layer between double-stacked Ag nanocrystals for nonvolatile memory device applications

Author keywords

[No Author keywords available]

Indexed keywords

NANOSTRUCTURED MATERIALS; PYROLYSIS; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

AG NANOCRYSTALS; DOUBLE-STACKED LAYERS; METAL-OXIDE-SILICON STRUCTURES;

HAFNIUM COMPOUNDS;

EID: 33847721420 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2430785 Document Type: Article

Times cited : (20)

References (13)

2
- 33847695114
- S. Tiwari, F. Rana, K. Chan, H. Hanafi, W. Chan, and D. Buchanan, Tech. Dig. - Int. Electron Devices Meet. 1995, 20.4.1.
- Tech. Dig. - Int. Electron Devices Meet. , vol.1995 , pp. 2041
- Tiwari, S.¹ Rana, F.² Chan, K.³ Hanafi, H.⁴ Chan, W.⁵ Buchanan, D.⁶

3
- 79952692024
- R. Muralidhar, Tech. Dig. - Int. Electron Devices Meet. 2003, 26.2.1.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2003 , pp. 2621
- Muralidhar, R.¹

4
- 33847695941
- R. Ohba, Y. Mitani, N. Sugiyanma, and S. Fujita, Tech. Dig. - Int. Electron Devices Meet. 2004, 36.7.1.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2004 , pp. 3671
- Ohba, R.¹ Mitani, Y.² Sugiyanma, N.³ Fujita, S.⁴

5
- 17044377788
- J. H. Chen, W. J. Yoo, and D. S. H. Chan, Appl. Phys. Lett. 86, 073114 (2005).
- (2005) Appl. Phys. Lett. , vol.86 , pp. 073114
- Chen, J.H.¹ Yoo, W.J.² Chan, D.S.H.³

6
- 0036714604
- Z. Liu, C. Lee, V. Narayanan, G. Pei, and E. C. Kan, IEEE Trans. Electron Devices 49, 1606 (2002).
- (2002) IEEE Trans. Electron Devices , vol.49 , pp. 1606
- Liu, Z.¹ Lee, C.² Narayanan, V.³ Pei, G.⁴ Kan, E.C.⁵

7
- 33847695551
- S. K. Samanta, P. K. Singh, W. J. Yoo, G. Samudra, Y.-C. Yeo, L. K. Bera, and N. Balasubramanian, Tech. Dig. - Int. Electron Devices Meet. 2005 7.5.1.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2005 , pp. 751
- Samanta, S.K.¹ Singh, P.K.² Yoo, W.J.³ Samudra, G.⁴ Yeo, Y.-C.⁵ Bera, L.K.⁶ Balasubramanian, N.⁷

8
- 33847741993
- M. Takata, S. Kondoh, T. Sakaguchi, H. Choi, J.-C. Shim, H. Kurino, and M. Koyanagi, Tech. Dig. - Int. Electron Devices Meet. 2003, 22.5.1.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2003 , pp. 2251
- Takata, M.¹ Kondoh, S.² Sakaguchi, T.³ Choi, H.⁴ Shim, J.-C.⁵ Kurino, H.⁶ Koyanagi, M.⁷

9
- 17444382701
- J. J. Lee and D.-L. Kwong, IEEE Trans. Electron Devices 52, 507 (2005).
- (2005) IEEE Trans. Electron Devices , vol.52 , pp. 507
- Lee, J.J.¹ Kwong, D.-L.²

10
- 0036810520
- A. L. Rogach, D. V. Talapin, E. V. Shevchenko, A. Kornowski, M. Haase, and H. Weller, Adv. Funct. Mater. 12, 653 (2002).
- (2002) Adv. Funct. Mater. , vol.12 , pp. 653
- Rogach, A.L.¹ Talapin, D.V.² Shevchenko, E.V.³ Kornowski, A.⁴ Haase, M.⁵ Weller, H.⁶

11
- 0004005306
- 2nd ed. (Wiley, New York
- CS. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), p. 396.
- (1981) Physics of Semiconductor Devices , pp. 396
- Sze, C.S.M.¹

12
- 17444379707
- C. M. Compagnoni, D. Ielmini, A. S. Spinelli, and A. L. Lacaita, IEEE Trans. Electron Devices 52, 569 (2005).
- (2005) IEEE Trans. Electron Devices , vol.52 , pp. 569
- Compagnoni, C.M.¹ Ielmini, D.² Spinelli, A.S.³ Lacaita, A.L.⁴

13
- 0004085710
- 2nd ed. (Pearson Prentice-Hall, Upper Saddle River, NJ
- D. J. Griffiths, Introduction to Quantum Mechanics, 2nd ed. (Pearson Prentice-Hall, Upper Saddle River, NJ, 2005), p. 83.
- (2005) Introduction to Quantum Mechanics , pp. 83
- Griffiths, D.J.¹

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