Charge trapping and device behavior in ferroelectric memories

Applied Physics Letters

Volumn 68, Issue 19, 1996, Pages 2660-2662

  Seager, C H ^a   Mcintyre, D C ^a   Warren, W L ^a   Tuttle, B A ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001418216     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116273     Document Type: Article

References (8)

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6. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1969), p. 370.
7. G. E. Pike, W. L. Warren, D. Dimos, B. A. Tuttle, R. Ramesh, J. Lee, V. G. Keramidas, and J. T. Evans, Jr., Appl. Phys. Lett. AIP 66, 484 (1995).
8. D. Dimos, W. L. Warren, M. B. Sinclair, B. A. Tuttle, and R. W. Schwartz, J. Appl. Phys. AIP 76, 4305 (1994).