Multilevel data storage memory devices based on the controlled capacitive coupling of trapped electrons

Advanced Materials

Volumn 23, Issue 18, 2011, Pages 2064-2068

  Lee, Jang Sik ^a   Kim, Yong Mu ^a   Kwon, Jeong Hwa ^b   Sim, Jae Sung ^c   Shin, Hyunjung ^a   Sohn, Byeong Hyeok ^b   Jia, Quanxi ^d  

^a Kookmin University   (South Korea)

^b Seoul National University   (South Korea)

^c SAMSUNG Electronics   (South Korea)

^d LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

charge injection; data storage; electron transport; nanoparticles; semiconductors

Indexed keywords

CAPACITIVE COUPLINGS; DATA STORAGE; ELECTRON TRANSPORT; HIGHLY ORDERED ARRAYS; MEMORY DEVICE; MEMORY STATE; METAL NANOPARTICLES; MULTILEVEL DATA; MULTILEVEL MEMORY; MULTIPLE DATA; NANO-METER SCALE; SEMICONDUCTORS; TRAPPED ELECTRONS; TRAPPING ELEMENTS;

DATA STORAGE EQUIPMENT; DATA VISUALIZATION; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TRAPS; VISUALIZATION;

NANOPARTICLES;

METAL NANOPARTICLE;

ARTICLE; CHEMISTRY; ELECTRICAL EQUIPMENT; ELECTRON; INFORMATION RETRIEVAL; METHODOLOGY; TEMPERATURE;

ELECTRICAL EQUIPMENT AND SUPPLIES; ELECTRONS; INFORMATION STORAGE AND RETRIEVAL; METAL NANOPARTICLES; TEMPERATURE;

EID: 79955608576     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201004150     Document Type: Article

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