Progress and outlook for mram technology

IEEE Transactions on Magnetics

Volumn 35, Issue 5 PART 1, 1999, Pages 2814-2819

  Tehrani, S ^a   Slaughter, J M ^a   Chen, E ^a   Durlam, M ^a   Shi, J ^a   Deherrera, M ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETORESISTANCE; RANDOM ACCESS STORAGE; SEMICONDUCTOR STORAGE; THERMODYNAMIC STABILITY;

GIANT MAGNETORESISTANCE (GMR); MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM);

MAGNETIC STORAGE;

EID: 0033183994     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/20.800991     Document Type: Article

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