SCOPUS 정보 검색 플랫폼

Volumn 91, Issue 8, 2002, Pages 5246-5249

Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory

(7) Nishimura, Naoki a Hirai, Tadahiko a Koganei, Akio a Ikeda, Takashi a Okano, Kazuhisa a Sekiguchi, Yoshinobu a Osada, Yoshiyuki a

a CANON INC (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH-DENSITY; IN-PLANE MAGNETIZATION; JUNCTION RESISTANCES; LOW ASPECT RATIO; MAGNETIC FORCE MICROSCOPES; MAGNETIC RANDOM ACCESS MEMORIES; MAGNETIC TUNNEL JUNCTION; MAGNETIZATION VORTICES; MAGNETORESISTIVE; MR RATIO; PERPENDICULAR MAGNETIZATION; SMALL AREA; SQUARENESS RATIO;

ASPECT RATIO; DEGRADATION; MAGNETIC DEVICES; MAGNETIC STORAGE;

SATURATION MAGNETIZATION;

EID: 0037091704 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1459605 Document Type: Article

Times cited : (421)

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