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Journal of Materials Chemistry

Volumn 21, Issue 38, 2011, Pages 14575-14580

Nanoparticle size dependent threshold voltage shifts in organic memory transistors

(5) Han, Su Ting a Zhou, Ye a Xu, Zong Xiang a Roy, V A L a Hung, T F a

a CITY UNIVERSITY OF HONG KONG (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; GOLD; GOLD ALLOYS; MONOLAYERS; NANOPARTICLES; SILICON COMPOUNDS; THRESHOLD VOLTAGE;

3-AMINOPROPYLTRIETHOXYSILANE; DATA RETENTION; DEVICE PROPERTIES; DIFFERENT SIZES; FUNCTIONALIZED SUBSTRATES; GOLD NANOPARTICLE; MEMORY EFFECTS; MEMORY PERFORMANCE; NANOPARTICLE SIZES; ON/OFF CURRENT RATIO; ORGANIC MEMORIES; SIZE DEPENDENCE; SIZE-DEPENDENT EFFECT; SUBTHRESHOLD SWING; THRESHOLD VOLTAGE SHIFTS;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 81855172210 PISSN: 09599428 EISSN: 13645501 Source Type: Journal
DOI: 10.1039/c1jm12113h Document Type: Article

Times cited : (81)

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