Enhanced light sensing characteristics of nanostructured gallium nitride/silicon heterojunctions: Interface matters

Journal of Applied Physics

Volumn 114, Issue 13, 2013, Pages

  Saron, K M A ^a   Hashim, M R ^a   Naderi, N ^a   Allam, Nageh K ^b  

^a SCHOOL OF PHYSICS   (Malaysia)

^b The American University in Cairo   (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CRYSTAL ORIENTATION; FABRICATION; GALLIUM NITRIDE; HETEROJUNCTIONS; III-V SEMICONDUCTORS; LIGHT; MORPHOLOGY; NANOCRYSTALLINE MATERIALS; NANOSTRUCTURES; NITRIDES; PHOTODETECTORS; PHOTODIODES; PHOTOLUMINESCENCE; PHOTONS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; URANIUM METALLOGRAPHY; VANADIUM METALLOGRAPHY; ZINC SULFIDE;

CURRENT VOLTAGE MEASUREMENT; GALLIUM NITRIDES (GAN); HEXAGONAL WURTZITE STRUCTURE; INTERFACE ARCHITECTURE; OPTICAL CHARACTERISTICS; OPTOELECTRONIC APPLICATIONS; PHOTOLUMINESCENCE SPECTRUM; THERMAL VAPOR DEPOSITIONS;

SILICON;

EID: 84885450644     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4824691     Document Type: Article

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