Epitaxial electrodeposition of ZnO nanowire arrays on p-GaN for efficient UV-light-emitting diode fabrication

ACS Applied Materials and Interfaces

Volumn 2, Issue 7, 2010, Pages 2083-2090

  Lupan, O ^a,b   Pauporte T ^a   Viana, B ^c   Tiginyanu, I M ^d   Ursaki, V V ^d   Cortes R ^e  

^a PSL RESEARCH UNIVERSITY   (France)

^b TECHNICAL UNIVERSITY OF MOLDOVA   (Moldova)

^c UNIVERSITÉ PIERRE ET MARIE CURIE   (France)

^d INSTITUTE OF APPLIED PHYSICS   (Moldova)

^e LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE   (France)

Author keywords

electrodeposition; epitaxy; light emitting diode structures; low voltage; UV emission; ZnO

Indexed keywords

ACTIVE LAYER; ANNEALED SAMPLES; ELECTROCHEMICAL GROWTH; EMISSION THRESHOLD; EPITAXIAL ELECTRODEPOSITION; EPITAXIALLY GROWN; FORWARD CURRENTS; HETEROSTRUCTURES; INTRINSIC DEFECTS; LED STRUCTURE; LOW DENSITY; LOW VOLTAGES; MICRO-RAMAN; MOSAICITY; NAKED-EYE; NEAR BAND EDGE; P-TYPE GAN; PL EMISSION; RECTIFYING BEHAVIORS; ROOM TEMPERATURE; SINGLE-CRYSTALLINE THIN FILMS; UV EMISSION; UV EMISSIONS; UV-LIGHT; XRD; ZNO; ZNO NANOWIRE ARRAYS;

CRYSTAL GROWTH; DIODES; DISTILLATION; ELECTRODEPOSITION; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT EMISSION; LIGHT EMITTING DIODES; NANOWIRES;

ZINC OXIDE;

EID: 77956978665     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am100334c     Document Type: Article

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