Effect of N/Ga flux ratio on transport behavior of Pt/GaN Schottky diodes

Journal of Applied Physics

Volumn 110, Issue 6, 2011, Pages

  Roul, Basanta ^a,b   Kumar, Mahesh ^a,b   Rajpalke, Mohana K ^a   Bhat, Thirumaleshwara N ^a   Sinha, Neeraj ^c   Kalghatgi, A T ^b   Krupanidhi, S B ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b BHARAT ELECTRONICS LIMITED   (India)

^c Office of Principal Scientific Advisor   (India)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-EDGE EMISSIONS; C-PLANE SAPPHIRE; DISLOCATION DENSITIES; FLUX RATIO; GAN FILM; LOWER ENERGIES; PIT DENSITY; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; RAMAN STUDIES; ROOM TEMPERATURE; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SCHOTTKY DIODES; TRANSPORT BEHAVIOR;

GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SCHOTTKY BARRIER DIODES;

SURFACE MORPHOLOGY;

EID: 80053467734     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3634116     Document Type: Article

References (36)

1. S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, Appl. Phys. Lett. 67, 1868 (1995). 10.1063/1.114359
2. M. A. Kahn, A. Bhattarai, J. N. Kuzina, and D. T. Olsen, Appl. Phys. Lett. 63, 1214 (1993). 10.1063/1.109775
3. H. Morko, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76, 1363 (1994). 10.1063/1.358463
4. E. Munoz, E. Monroy, J. L. Pau, F. Calle, F. Omns, and P. Gibart, J. Phys.: Condens. Matter 13, 7115 (2001). 10.1088/0953-8984/13/32/316
5. M. Asif Khan, M. S. Shur, J. N. Kuznia, Q. Chen, J. Burm, and W. Schaff, Appl. Phys. Lett. 66, 1083 (1995). 10.1063/1.113579
6. J. F. Muth, J. H. Lee, I. K. Shmagin, R. M. Kolbas, H. C. Casey, B. P. Keller, U. K. Mishra, and S. P. DenBaars, Appl. Phys. Lett. 71, 2572 (1997). 10.1063/1.120191
7. R. Averbeck and H. Riechert, Phys. Status Solidi A 176, 301 (1999). 10.1002/(SICI)1521-396X(199911)176:1<>1.0.CO;2-M
8. T. Bttcher, S. Einfeldt, V. Kirchner, S. Figge, H. Heinke, D. Hommel, H. Selke, and P. L. Ryder, Appl. Phys. Lett. 73, 3232 (1998). 10.1063/1.122728
9. C. Adelmann, R. Langer, G. Feuillet, and B. Daudin, Appl. Phys. Lett. 75, 3518 (1999). 10.1063/1.125374
10. R. C. Powell, N. E. Lee, Y. W. Kim, and J. E. Greene, J. Appl. Phys. 73, 189 (1993). 10.1063/1.353882
11. W. Qian, M. Skowronski, M. D. Graef, K. Doverspike, L. B. Rowland, and D. K. Gaskill, Appl. Phys. Lett. 66, 1544 (1995). 10.1063/1.113253
12. V. Narayanan, K. Lorenz, W. Kim, and S. Mahajan, Appl. Phys. Lett. 78, 1544 (2001). 10.1063/1.1352699
13. Z. Yu, M. A. L. Johnson, J. D. Brown, N. A. El-Masry, J. W. Cook, and J. F. Schetzina, J. Cryst. Growth 195, 333 (1998). 10.1016/S0022-0248(98)00638-1
14. X. Q. Shen, H. Matsuhata, and H. Okumura, Appl. Phys. Lett. 86, 021912 (2005). 10.1063/1.1849836
15. B. Heying, X. H. We, S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. Denbaars, and J. S. Speck, Appl. Phys. Lett. 68, 643 (1996). 10.1063/1.116495
16. T. Metzger, R. Hpler, E. Born, O. Ambacher, M. Stutzmann, R. Stmmer, M. Schuster, H. Gbel, S. Christiansen, M. Albrecht, and H. P. Strunk, Philos. Mag. A 77, 1013 (1998). 10.1080/01418619808221225
17. B. Heying, R. Averbeck, L. F. Chen, E. Haus, H. Riechert, and J. S. Speck, J. Appl. Phys. 88, 1855 (2000). 10.1063/1.1305830
18. E. J. Tarsa, B. Heying, X. H. Wu, P. Fini, S. P. DenBaars, and J. S. Speck, J. Appl. Phys. 82, 5472 (1997). 10.1063/1.365575
19. A. Hierro, A. R. Arehart, B. Heying, M. Hansen, U. K. Mishra, S. P. DenBaars, J. S. Speck, and S. A. Ringel, Appl. Phys. Lett. 80, 805 (2002). 10.1063/1.1445274
20. W. Rieger, T. Metzger, H. Angerer, R. Dimitrov, O. Ambacher, and M. Stutzmann, Appl. Phys. Lett. 68, 970 (1996). 10.1063/1.116115
21. F. Demangeot, J. Frandon, M. A. Renucci, O. Briot, B. Gil, and R. L. Aulombard, Solid State Commun. 100, 207 (1996). 10.1016/0038-1098(96)00410-3
22. V. Lemos, C.A. Arguello, and R. C. C. Leite, Solid State Commun. 11, 1351 (1972). 10.1016/0038-1098(72)90541-8
23. A. Cingolani, M. Ferrara, M. Lugar, and G. Scamarcio, Solid State Commun. 58, 823 (1986). 10.1016/0038-1098(86)90778-7
24. J. F. Wang, D. Z. Yao, J. Chen, J. J. Zhu, D. G. Zhao, D. S. Jiang, and J. W. Liang, Appl. Phys. Lett. 89, 152105 (2006). 10.1063/1.2360900
25. T. Kozawa, T. Kachi, H. Kano, H. Nagase, N. Koide, and K. Manabe, J. Appl. Phys. 77, 4389 (1995). 10.1063/1.359465
26. E. J. Miller, D. M. Schaadt, E. T. Yu, X. L. Sun, L. J. Brillson, P. Waltereit, and J. S. Speck, J. Appl. Phys. 94, 7611 (2003). 10.1063/1.1627460
27. J. Miller, E.T. Yu, P. Waltereit, and J. S. Speck, Appl. Phys. Lett. 84, 535 (2004). 10.1063/1.1644029
28. K. Cinar, N. Yildirim, C. Coskun, and A. Turut, J. Appl. Phys. 106, 073717 (2009). 10.1063/1.3236647
29. R. T. Tung, Mater. Sci. Eng. R 35, 1 (2001). 10.1016/S0927-796X(01)00037- 7
30. B. Roul, M. K. Rajpalke, T. N. Bhat, M. Kumar, N. Sinha, A. T. Kalghatgi, and S. B. Krupanidhi, J. Appl. Phys. 109, 044502 (2011). 10.1063/1.3549685
31. H. Morko, Handbook of Nitride Semiconductors and Devices (Wiley-VCH, Berlin, 2008).
32. M. Shur, Physics of Semiconductor Devices (Prentice-Hall, Engelwood Cliffs, 1990).
33. M. Sawada, T. Sawada, Y. Yanagata, K. Imai, H. Kimura, M. Yoshino, K. Iizuka, and H. Tomozawa, J. Cryst. Growth 189-190, 706 (1998). 10.1016/S0022-0248(98)00265-6
34. X. M. Shen, D. G. Zhao, Z. S. Liu, Z. F. Hu, H. Yang, and J. W. Liang, Solid-State Electron. 49, 847 (2005). 10.1016/j.sse.2005.02.003
35. C. B. Soh, S. J. Chua, H. F. Lim, D. Z. Chi, S. Tripathy, and W. Liu, J. Appl. Phys. 96, 1341 (2004). 10.1063/1.1757654
36. M. A. Lampert and P. Mark, Current Injection in Solids (Academic, New York, 1970).